Optoelectronic and dielectric properties of GaAs x Sb1-x ternary alloys
Source abstract
Abstract
Based on the pseudopotential scheme under the virtual crystal approximation in which the effect of compositional disorder is involved, the dependence of optoelectronic properties of GaAs x Sb1-x on alloy composition x have been studied. Our results showed generally good agreement with the available experimental data. The material of interest is found to exhibit features of both direct and indirect band-gap semiconductor depending on the alloy composition x. The method used has been combined with the Harrison bond-orbital model and employed to calculate the dielectric constants and their composition dependence.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Semiconductor materials and interfaces
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