Magnetic Field-Induced Polarization Rotation in Strain-Engineered 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3/CoFe2O4 Magnetoelectric Nanocomposites for Energy Harvesting
Source abstract
Abstract
The study focuses on the polarization dynamics of the ferroelectric phase under an external magnetic field in a trilayered magnetoelectric (ME) composite of 0.94(Na 0.5 Bi 0.5 TiO 3 )-0.06BaTiO 3 (NBT-BT)/CoFe 2 O 4 (CFO)/NBT-BT. With the estimation of gradient size of the strain across the interface, the thin films with varying top layer (NBT-BT) thicknesses were fabricated. The piezoelectric displacement curves revealed the linear characteristics for the 30 nm NBT-BT ME composite due to the presence of dominant interfacial strain. Time-resolved polarization switching studies confirmed the role of interfacial strain on the time scale of polarization switching of the ferroelectric phase. Magnetic field-assisted piezoresponse force microscopy studies confirmed the presence of nonlinear contribution like polarization rotation in the 100 nm NBT-BT ME composite. The interfacial strain was found to operate in a way that imposes constraints on the polarization rotation in a spatial region of ∼20–30 nm away from the interface. However, at a spatial region >30 nm, the interfacial strain was found to supplement the field-induced strain and assisted the polarization rotation to happen. The spatial-dependent behavioral analysis of the interface strain on the polarization dynamics will help in using the ME composite for targeted device applications such as actuators or energy harvesters.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Smart Materials and Devices Lab, Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Hyderabad, Telangana 502285, India
Phase Change Memory Lab, Advanced Memory and Computing Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
Funding
Science and Engineering Research Board · Department of Science and Technology, Ministry of Science and Technology, India · Defence Research and Development Organisation
References (42)
Show source-provided references
1. 10.1038/nature0502310.1038/nature05023 ↗
2. 10.1088/0022-3727/38/8/R0110.1088/0022-3727/38/8/R01 ↗
3. 10.1002/adma.20100363610.1002/adma.201003636 ↗
4. 10.3390/act501000910.3390/act5010009 ↗
5. 10.1038/nmat180410.1038/nmat1804 ↗
6. 10.1021/acsnano.6b0546910.1021/acsnano.6b05469 ↗
7. 10.1038/nmat180510.1038/nmat1805 ↗
8. 10.1002/adma.20090432610.1002/adma.200904326 ↗
9. 10.1021/acsanm.0c0226510.1021/acsanm.0c02265 ↗
10. 10.1063/1.235381910.1063/1.2353819 ↗
11. 10.1021/acssuschemeng.9b0505810.1021/acssuschemeng.9b05058 ↗
12. 10.1063/1.367787710.1063/1.3677877 ↗
13. 10.1088/0964-1726/17/4/04500910.1088/0964-1726/17/4/045009 ↗
14. 10.1111/j.1551-2916.2008.02259.x10.1111/j.1551-2916.2008.02259.x ↗
15. 10.1039/C5EE00414D10.1039/C5EE00414D ↗
16. 10.1039/C7SE00403F10.1039/C7SE00403F ↗
17. 10.1109/TMAG.2011.215819010.1109/TMAG.2011.2158190 ↗
18. 10.1088/0964-1726/24/6/06502410.1088/0964-1726/24/6/065024 ↗
19. 10.1063/1.487011610.1063/1.4870116 ↗
20. 10.1063/1.496204710.1063/1.4962047 ↗
21. 10.1016/j.cap.2012.01.01610.1016/j.cap.2012.01.016 ↗
22. 10.1039/C6RA21224G10.1039/C6RA21224G ↗
23. 10.1063/1.367905410.1063/1.3679054 ↗
24. 10.1063/5.003915610.1063/5.0039156 ↗
25. 10.1103/PhysRevB.74.18410410.1103/PhysRevB.74.184104 ↗
26. 10.1016/j.ceramint.2021.11.30610.1016/j.ceramint.2021.11.306 ↗
27. 10.1088/0034-4885/73/5/05650210.1088/0034-4885/73/5/056502 ↗
28. 10.1039/C2NR00064D10.1039/C2NR00064D ↗
29. 10.1016/j.matlet.2016.04.19410.1016/j.matlet.2016.04.194 ↗
30. 10.1016/j.jmmm.2018.11.08210.1016/j.jmmm.2018.11.082 ↗
31. 10.1021/acsanm.0c0226510.1021/acsanm.0c02265 ↗
32. Lines M. E. · 200110.1093/acprof:oso/9780198507789.001.0001 ↗
33. 10.1063/1.479340010.1063/1.4793400 ↗
34. 10.1063/1.475762110.1063/1.4757621 ↗
35. 10.1063/1.37112010.1063/1.371120 ↗
36. 10.1063/1.12375610.1063/1.123756 ↗
37. 10.1016/j.sna.2007.03.01610.1016/j.sna.2007.03.016 ↗
38. 10.1103/PhysRevB.81.14412510.1103/PhysRevB.81.144125 ↗
39. 10.1007/s00339-004-2925-210.1007/s00339-004-2925-2 ↗
40. 10.1063/1.142121910.1063/1.1421219 ↗
41. 10.1063/1.486287610.1063/1.4862876 ↗
42. 10.1515/ehs-2013-002610.1515/ehs-2013-0026 ↗