Structural Optimized H-Gate High Schottky Barrier Bidirectional Tunnel Field Effect Transistor

In this work, we proposed a structural optimized H-shaped gate bidirectional tunnel field effect transistor with high on-state current based on high Schottky barrier plug-in source–drain contacts and central assistant gate (H-Gate HSB-BTFET). Compared to the previously proposed high Schottky barrier bidirectional tunnel field effect transistor (HSB-BTFET), the proposed H-Gate BTFET achieves excellent switching characteristics such as better forward on-state current, lower subthreshold swing (SS), lower power consumption, higher I on – I off ratio, and lower band to band tunneling (BTBT) induced leakage. The physical mechanism of device performance improvement is explained, analyzed, and compared with HSB-BTFET. In addition, no more complex process technology and expensive millisecond annealing process are needed; the proposed H-Gate BTFET can be used as an alternative candidate for mainstream integration technology.