Monitoring the Temperature of a Mo/Si Mirror with Photoluminescence in Extreme-Ultraviolet Lithography
Source abstract
Abstract
Extreme-ultraviolet lithography uses a Mo/Si multilayer mirror as an optical unit to produce nanochips in a semiconductor fabrication plant. The Mo/Si multilayer mirror radiates an intense photoluminescence in the wavelength region 200–420 nm upon excitation with light at 13.5 nm. The emissions of the Mo/Si multilayer mirror depend noticeably on its operational temperature; we thus suggest to apply this property to directly monitor the temperature of a Mo/Si multilayer mirror in extreme-ultraviolet lithography. This scheme to monitor the temperature of a mirror can trace the real-time temperature due to the intrinsic property of photoluminescence.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advancements in Photolithography Techniques · Optical Coatings and Gratings · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Medical Research, Hualien Tzu Chi Hospital, Buddhist Tzu Chi Medical Foundation, No. 707, Sec. 3, Chung-Yang Road, Hualien City 970, Taiwan
Mastek Technologies, Inc., 4F-4, No. 13, Wuquan first Road, Xinzhuang, New Taipei City 24892, Taiwan
Tzu-Chi University of Science and Technology, No. 880, Sec. 2, Chien-kuo Road, Hualien City 970, Taiwan
Funding
Ministry of Science and Technology, Taiwan
References (32)
Show source-provided references
1. 10.1515/aot-2017-002910.1515/aot-2017-0029 ↗
2. 10.1080/08940886.2019.163443010.1080/08940886.2019.1634430 ↗
3. 10.1080/08940886.2019.163443110.1080/08940886.2019.1634431 ↗
4. 10.1117/12.251728410.1117/12.2517284 ↗
5. 10.1109/IEDM13553.2020.937200910.1109/IEDM13553.2020.9372009 ↗
6. 10.35848/1347-4065/ac49fa10.35848/1347-4065/ac49fa ↗
7. 10.1515/aot-2021-001810.1515/aot-2021-0018 ↗
8. 10.33079/jomm.1902020210.33079/jomm.19020202 ↗
9. 10.1088/2631-7990/ac087c10.1088/2631-7990/ac087c ↗
10. Partlo, W. N.; Bowering, N.; Ershov, A. I.; Fomenkov, I. V.; Myers, D. W.; Oliver, I. R.; Viatella, J.; Jacques, R. N. (2007) EUV light source. Patent US7164144B2, 2007.
11. Ershov, A. I.; Marx, W. F. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source. Patent US7196342B2, 2007.
12. Partlo, W. N.; Brown, D. J. W.; Fomenkov, I. V.; Ershov, A. I.; Myers, D. W. LPP EUV light source. Patent US7317196B2, 2008.
13. 10.1117/12.208553810.1117/12.2085538 ↗
14. 10.1117/12.208742110.1117/12.2087421 ↗
15. 10.1116/1.494245610.1116/1.4942456 ↗
16. 10.1364/AO.42.00404910.1364/AO.42.004049 ↗
17. 10.1063/1.475945010.1063/1.4759450 ↗
18. 10.1063/1.357531910.1063/1.3575319 ↗
19. 10.3390/nano1111278210.3390/nano11112782 ↗
20. 10.1021/acsnano.7b0663310.1021/acsnano.7b06633 ↗
21. 10.1016/j.isci.2020.10114510.1016/j.isci.2020.101145 ↗
22. 10.1186/s43074-020-00022-w10.1186/s43074-020-00022-w ↗
23. 10.1002/adom.20210242410.1002/adom.202102424 ↗
24. 10.1021/acsami.9b1837210.1021/acsami.9b18372 ↗
25. 10.1039/D0CP05304J10.1039/D0CP05304J ↗
26. 10.1364/OL.40463810.1364/OL.404638 ↗
27. 10.1021/ac200808n10.1021/ac200808n ↗
28. 10.1021/ac503268q10.1021/ac503268q ↗
29. Sild O. · 2012
30. 10.1063/1.201251110.1063/1.2012511 ↗
31. 10.1016/j.mseb.2007.08.01410.1016/j.mseb.2007.08.014 ↗
32. 10.1142/S0218625X0200246410.1142/S0218625X02002464 ↗