DataVXACS Applied Electronic MaterialsPaper
journal article·2022-04-26

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate

Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang, Toshio Kamiya

ACS Applied Electronic Materials· Volume 4· Issue 4
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Source abstract

Abstract

We investigated the intrinsic physical properties of polycrystalline Zn3N2 thin films by suppressing donor impurities using the ultrahigh-vacuum sputtering technique. The residual carrier density was reduced to 4.4 × 1017 cm–3, resulting in a nondegenerate Zn3N2 thin film. In this film, we observed that grain boundary scattering had a significant effect on mobility, in contrast to previous reports on degenerate films. By fitting using the Seto model, the in-grain mobility reached 340 cm2 V–1 s–1, which is comparable to the mobility of epitaxial thin films, even though they were deposited at room temperature. Electric-double-layer transistors with nondegenerate Zn3N2 active layers were also examined to verify the potential as a transistor active layer material. The insights into trap density of polycrystalline Zn3N2 semiconductor in this report imply opportunities to explore high-performance flexible electronic devices.
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Research context

Ceramics & glassesElectronic materials

OpenAlex topics: ZnO doping and properties · Machine Learning in Materials Science · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science, National Engineering Laboratory for TFT-LCD Materials and Technologies, Fudan University, 2005 Songhu Road, Yangpu District, Shanghai 200438, China

Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan

Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan

Funding

Ministry of Education, Culture, Sports, Science and Technology · Japan Society for the Promotion of Science · China Scholarship Council · Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology

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