journal article·2021-08-24

Photochromic Semiconductors with Record-High Dielectric Permittivity Gain at Room Temperature

Cai Sun, Ming-Sheng Wang, Guo-Cong Guo

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Abstract

Bistable-state dielectric properties without maintaining external stimuli after switching are highly desirable for nonvolatile memory devices; however, research on switchable dielectric materials was mostly limited to the stimulation-constant mode. This work reports a record-high dielectric permittivity gain through the bistable-state modulation mode in two photochromic semiconductors (PSCs), and reveals the general structure characteristic and intrinsic physical reasons for the increase of dielectric permittivity. This discovery will guide the design for switchable dielectric materials with dielectric permittivity gain in the future.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Perovskite Materials and Applications · Transition Metal Oxide Nanomaterials · Advanced Memory and Neural Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China

Funding

National Natural Science Foundation of China

References (27)

Show source-provided references
1. 10.1021/cm503003f10.1021/cm503003f ↗
2. 10.1002/adma.20160696610.1002/adma.201606966 ↗
3. 10.1002/anie.20141100510.1002/anie.201411005 ↗
4. 10.1021/ja311033510.1021/ja3110335 ↗
5. 10.1002/anie.20100120810.1002/anie.201001208 ↗
6. 10.1002/anie.20140849110.1002/anie.201408491 ↗
7. 10.1002/anie.20180258010.1002/anie.201802580 ↗
8. 10.1021/acs.chemmater.6b0172610.1021/acs.chemmater.6b01726 ↗
9. 10.1021/jacs.8b0481810.1021/jacs.8b04818 ↗
10. 10.1002/anie.20110514710.1002/anie.201105147 ↗
11. 10.1103/PhysRevLett.92.25720110.1103/PhysRevLett.92.257201 ↗
12. 10.1103/PhysRevLett.93.10720710.1103/PhysRevLett.93.107207 ↗
13. 10.1002/adma.20060007110.1002/adma.200600071 ↗
14. 10.1103/PhysRevLett.108.12720110.1103/PhysRevLett.108.127201 ↗
15. 10.1002/adma.20170251210.1002/adma.201702512 ↗
16. 10.1143/JPSJ.77.05470410.1143/JPSJ.77.054704 ↗
17. 10.1002/anie.20050325210.1002/anie.200503252 ↗
18. 10.1007/s10847-015-0524-910.1007/s10847-015-0524-9 ↗
19. 10.1021/acsami.9b0637510.1021/acsami.9b06375 ↗
20. 10.1021/jacs.7b1010110.1021/jacs.7b10101 ↗
21. Guo G. C. · Progress in Chemistry · 2001 · 13 · 151
22. 10.1021/ja100936w10.1021/ja100936w ↗
23. 10.1002/jcc.2288510.1002/jcc.22885 ↗
24. Kao K. C. · 2004
25. 10.1016/j.jpcs.2015.08.02110.1016/j.jpcs.2015.08.021 ↗
26. 10.1002/anie.20161018010.1002/anie.201610180 ↗
27. 10.1002/anie.20190412110.1002/anie.201904121 ↗