Photochromic Semiconductors with Record-High Dielectric Permittivity Gain at Room Temperature
Source abstract
Abstract
Bistable-state dielectric properties without maintaining external stimuli after switching are highly desirable for nonvolatile memory devices; however, research on switchable dielectric materials was mostly limited to the stimulation-constant mode. This work reports a record-high dielectric permittivity gain through the bistable-state modulation mode in two photochromic semiconductors (PSCs), and reveals the general structure characteristic and intrinsic physical reasons for the increase of dielectric permittivity. This discovery will guide the design for switchable dielectric materials with dielectric permittivity gain in the future.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Transition Metal Oxide Nanomaterials · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou, Fujian 350108, China
State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
Funding
National Natural Science Foundation of China
References (27)
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