ALD Growth of MgxCa1–xO on GaN and Its Band Offset Analysis
Source abstract
Abstract
Atomic layer deposition (ALD) processes were developed for growing MgO and CaO on GaN substrates using a home-built ALD reactor with amidinate-based precursors. An optimal deposition condition was then determined to deposit pure MgxCa1–xO by tuning deposition temperature, achieving a high-quality film without carbon and hydroxyl contamination. Band offset analysis was conducted by X-ray photoelectron spectroscopy on MgxCa1–xO/GaN samples with various compositions. Mg0.25Ca0.75O/GaN demonstrated band alignments between defect-free and fully pinned, while other ratios showed near fully pinned alignments, which agree with the best electrical properties achieved in our previous studies. This result indicates that band offset analysis provides a good aid in understanding part of the electrical and interfacial properties for oxide/semiconductor structures.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
Funding
Division of Chemistry · Charles Stark Draper Laboratory · Office of Naval Research · Office of Science
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