Interfacial Properties of Doped Semiconductor Materials Can Alter the Behavior of Pseudomonas aeruginosa Films

A simple treatment of UV light exposure can change the interfacial properties of variably doped GaN substrates. The changes in surface charge and chemistry after exposure to UV light were studied as way to alter the behavior of Pseudomonas aeruginosa films. The properties of GaN surfaces were characterized by atomic force microscopy, Kelvin probe force microscopy, and X-ray photoelectron spectroscopy. The Pseudomonas aeruginosa film responses were quantified by analyzing changes in the amount of catalase, reactive oxygen species, and intracellular Ca2+ concentrations. The comprehensive analysis supports the notion that the response of P. aeruginosa biofilms can be controlled by the properties of the interface and the amount of time the film is in contact with it.