Zero-Bias Photodetection and Opto-Synaptic Plasticity in BP/MoS 2 and WS 2 /PdSe 2 van der Waals Heterostructures
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide van der Waals (vdW) heterostructures assemble atomically thin crystals into defect-free interfaces, where band alignment, interlayer coupling, and built-in electric fields can be engineered for multifunctional, low-power optoelectronics. This Spotlight provides a concise, critical overview of two complementary platforms - BP/MoS 2 and WS 2 /PdSe 2 - highlighting how their type-II or type-I band alignment enables optoelectronic operations. In back-gate transistors, both BP/MoS 2 and WS 2 /PdSe 2 heterojunctions exhibit transfer curves with high ON/OFF ratios that can reach 10 7 –10 8 and hysteresis, which is reduced in a vacuum. In BP/MoS 2, deterministic stacking and contact/work function engineering stabilize a type-II band offset that supports zero ( V ds = 0 V) or low (| V ds | ≤ 5 V) bias operation with fast, dual-time scale photoresponse (from hundreds of ms to ∼1 s) and linear behavior up to 50 μW optical power. Pressure tunes transport mechanisms (from thermionic to band-to-band tunnelling and ohmic), and four-probe data provide a band offset of 68 meV and zero-bias operation at 600 nm, consistent with MoS 2 -driven visible selectivity. Similarly, WS 2 /PdSe 2 stacks enable visible-band photodetection at low bias, with pressure-tunable transport and photoresponse; the pressure-dependent photocurrent makes them promising for optoelectronic pressure sensing. In a gate-assisted regime (negative V gs in high vacuum), persistent photoconductivity enables opto-synaptic plasticity in WS 2 /PdSe 2 heterojunctions with paired-pulse facilitation (PPF) of 137% and post-tetanic potentiation (PTP) of 300% under 1 s pulse trains. Overall, this Spotlight examines synthesis pathways, interfacial structure, and device-level behavior, and discusses stability, uniformity, and readout compatibility as practical levers for translating single-device demonstrations into reproducible arrays.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Thermal properties of materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno 84084, Italy
2D Foundry Research Group
Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC)
Fakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, Duisburg D-47057, Germany
Funding
Ministerio de Ciencia, Innovaci?n y Universidades · European Regional Development Fund · Deutsche Forschungsgemeinschaft · Universit? degli Studi di Salerno · NextGenerationEU · H2020 European Research Council
References (43)
Show source-provided references
1. 10.1002/adfm.20220695210.1002/adfm.202206952 ↗
2. 10.1002/adfm.20211269610.1002/adfm.202112696 ↗
3. 10.1063/5.020580310.1063/5.0205803 ↗
4. 10.1002/lpor.20220048610.1002/lpor.202200486 ↗
5. 10.1016/j.surfin.2022.10211910.1016/j.surfin.2022.102119 ↗
6. 10.1016/j.jpcs.2024.11186910.1016/j.jpcs.2024.111869 ↗
7. 10.1021/acsami.1c0395910.1021/acsami.1c03959 ↗
8. 10.1016/j.commatsci.2020.11005610.1016/j.commatsci.2020.110056 ↗
9. 10.1515/nanoph-2019-054910.1515/nanoph-2019-0549 ↗
10. 10.1021/acs.nanolett.3c0307610.1021/acs.nanolett.3c03076 ↗
11. 10.1088/1361-6528/aca61a10.1088/1361-6528/aca61a ↗
12. 10.1007/s40843-024-2944-010.1007/s40843-024-2944-0 ↗
13. 10.1039/D1NR03243G10.1039/D1NR03243G ↗
14. 10.1021/acsphotonics.8b0167510.1021/acsphotonics.8b01675 ↗
15. 10.1007/s12274-024-6638-x10.1007/s12274-024-6638-x ↗
16. 10.1002/adom.20200199110.1002/adom.202001991 ↗
17. 10.1002/adfm.20241670310.1002/adfm.202416703 ↗
18. 10.1063/5.011988810.1063/5.0119888 ↗
19. 10.1002/adom.20250081110.1002/adom.202500811 ↗
20. 10.1088/1361-6463/ade3ea10.1088/1361-6463/ade3ea ↗
21. 10.1016/j.heliyon.2025.e4244310.1016/j.heliyon.2025.e42443 ↗
22. 10.1016/j.surfin.2024.10444510.1016/j.surfin.2024.104445 ↗
23. 10.1088/2053-1583/ade9da10.1088/2053-1583/ade9da ↗
24. 10.1002/adfm.20252696610.1002/adfm.202526966 ↗
25. 10.1016/j.jallcom.2023.17141610.1016/j.jallcom.2023.171416 ↗
26. 10.3390/nano1220363510.3390/nano12203635 ↗
27. 10.1021/acs.jpcc.0c0644110.1021/acs.jpcc.0c06441 ↗
28. 10.1002/ls.156210.1002/ls.1562 ↗
29. 10.3762/bjnano.5.3210.3762/bjnano.5.32 ↗
30. 10.1007/s40820-018-0212-610.1007/s40820-018-0212-6 ↗
31. 10.1002/pssb.20220053710.1002/pssb.202200537 ↗
32. 10.1007/s11467-018-0759-110.1007/s11467-018-0759-1 ↗
33. 10.1088/2632-959X/ade46010.1088/2632-959X/ade460 ↗
34. 10.1103/PhysRevLett.121.05680210.1103/PhysRevLett.121.056802 ↗
35. 10.1002/advs.20230516210.1002/advs.202305162 ↗
36. 10.1039/D4NR00342J10.1039/D4NR00342J ↗
37. 10.1088/2053-1583/1/1/01100210.1088/2053-1583/1/1/011002 ↗
38. 10.1002/adfm.20190248310.1002/adfm.201902483 ↗
39. 10.1016/j.surfin.2021.10130810.1016/j.surfin.2021.101308 ↗
40. 10.1002/aelm.20200105710.1002/aelm.202001057 ↗
41. 10.1007/s42114-023-00712-610.1007/s42114-023-00712-6 ↗
42. 10.1002/adma.20230809010.1002/adma.202308090 ↗
43. 10.1021/acsami.3c1962410.1021/acsami.3c19624 ↗