DataVXACS Applied Electronic MaterialsPaper
journal article·2025-11-25Open access

Graphene Heterostructure-Based Non-Volatile Memory Devices with Top Floating Gate Programming

Gabriel Labes Rodrigues, Ana B. Yoshida, Guilherme S. Selmi, Nickolas Tomi Kamijo Barbosa de Jesus, Igor Ricardo Filgueira e Silva, Kenji Watanabe, Takashi Taniguchi, Rafael F. de Oliveira, Victor Lopez-Richard, Alisson R. Cadore

ACS Applied Electronic Materials· Volume 7· Issue 22
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Source abstract

Abstract

High Resolution Image Download MS PowerPoint Slide We present a graphene-based memory platform built on dual-gated field-effect transistors (GFETs). By integrating a lithographically defined metal patch directly atop the hexagonal boron nitride (hBN)-graphene channel, the device functions simultaneously as a top gate, floating gate (FG) reservoir, and active reset contact. This architecture forms an ultrathin van der Waals heterostructure with strong capacitive coupling to the back-gate, confirmed by a dynamic model, enabling a tunable and wide memory window that scales with back-gate voltage and is further enhanced by reducing hBN thickness or increasing FG area. Our devices demonstrate reversible, high-efficiency (>90%) charge programming, robust nonvolatile behavior across 10–300 K and a wide range of operation speeds, and endurance beyond 9800 cycles. Importantly, a grounded top electrode provides on-demand charge erasure, offering functionality that is absent in standard FG designs. These results position hBN/graphene-based GFETs as a compact, energy-efficient platform for next-generation 2D flash memory, with implications for multilevel memory schemes and cryogenic electronics.
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Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · Advanced Memory and Neural Computing · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Brazilian Nanotechnology National Laboratory (LNNano)

Brazilian Center for Research in Energy and Materials (CNPEM), MCTI

“Gleb Wataghin” Institute of Physics

State University of Campinas

Departamento de Física

Universidade Federal de São Carlos

Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Programa de Pós-Graduação Em Física, Instituto de Física

Universidade Federal de Mato Grosso

Funding

Ministry of Education, Culture, Sports, Science and Technology · Core Research for Evolutional Science and Technology · Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico · Centros de Pesquisa, Inova??o e Difus?o, Funda??o Amaz?nia Paraense de Amparo ? Pesquisa · Japan Society for the Promotion of Science · Funda??o de Amparo ? Pesquisa do Estado de S?o Paulo · Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior

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