journal article·2025-06-24

Photocontrolled Reconfigurable Logic Based on a Two-Dimensional Heterostructured Transistor

Yusen Tian, Zhe Sheng, Zheng Zhang, Penghao Chen, Ziyu Ming, Haoran Sun, Zengxing Zhang

ACS Applied Electronic Materials· Volume 7· Issue 12
Publisher page

Abstract

Two-dimensional (2D) reconfigurable devices, known for their embedded multiple logic functions, are promising for next-generation electronics and optoelectronics. Here, we present a middle-overlapped dual-gate field-effect transistor (MODG-FET) based on a MoS 2 /h-BN/graphene heterostructure, which integrates reconfigurable logic functions between AND and a follower within a single device. Arising from the programmable nonvolatile photoactivated charges trapped in the h-BN, the reconfiguration is achieved by simultaneously utilizing electrical and optical signals rather than one sole signal in conventional devices, enabling more hardware security for logic gate circuits. Leveraging this behavior, we demonstrate the MODG-FET for hardware encryption and decryption to process ASCII codes by using the gate voltage pulse and UV light stimulation as a key. This work should be helpful in the development of 2D reconfigurable logic transistors, offering high energy and area efficiency while enhancing hardware security in future logic gate circuits, meeting the urgent demand for state-of-the-art information technology.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Advancements in Semiconductor Devices and Circuit Design · Neural Networks and Reservoir Computing

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Microelectronics

Fudan University

School of Information Science and Technology

Hangzhou Normal University

National Integrated Circuit Innovation Center

Funding

National Natural Science Foundation of China

References (46)

Show source-provided references
1. 10.1016/S1369-7021(06)71539-510.1016/S1369-7021(06)71539-5 ↗
2. 10.1038/nature1067910.1038/nature10679 ↗
3. Yeo, K. H.; Suk, S. D.; Li, M.; Yeoh, Y. Y.; Cho, K. H.; Hong, K. H.; Yun, S. K.; Lee, M. S.; Cho, N. M.; Lee, K. H. Gate-All-Around (GAA) Twin Silicon Nanowire MOSFET (TSNWFET) with 15 nm Length Gate and 4 nm Radius Nanowires. 2006 IEEE International Electron Devices Meeting; IEEE, 2006; p 286.10.1109/IEDM.2006.346838 ↗
4. Yu, B.; Chang, L. L.; Ahmed, S.; Wang, H. H.; Bell, S.; Yang, C. Y.; Tabery, C.; Ho, C.; Xiang, Q.; King, T. J. FinFET scaling to 10nm gate length. 2002 IEEE International Electron Devices Meeting; IEEE, 2002; pp 251–254.
5. 10.1038/s41586-023-06145-x10.1038/s41586-023-06145-x ↗
6. 10.1016/j.sse.2021.10803610.1016/j.sse.2021.108036 ↗
7. 10.1016/j.sse.2016.10.02710.1016/j.sse.2016.10.027 ↗
8. 10.1109/TED.2023.334636110.1109/TED.2023.3346361 ↗
9. 10.1021/nn900284b10.1021/nn900284b ↗
10. De Marchi, M.; Sacchetto, D.; Frache, S.; Zhang, J.; Gaillardon, P. E.; Leblebici, Y.; De Micheli, G. Polarity Control in Double-Gate, Gate-All-Around Vertically Stacked Silicon Nanowire FETs. 2012 International Electron Devices Meeting; IEEE, 2012; pp 8.4.1–8.4.4.10.1109/IEDM.2012.6479004 ↗
11. 10.1021/nl203094h10.1021/nl203094h ↗
12. 10.1021/nl300930m10.1021/nl300930m ↗
13. 10.1109/TNANO.2015.242989310.1109/TNANO.2015.2429893 ↗
14. 10.1002/inf2.1235510.1002/inf2.12355 ↗
15. 10.1038/nnano.2014.3510.1038/nnano.2014.35 ↗
16. 10.1038/s41586-021-03339-z10.1038/s41586-021-03339-z ↗
17. 10.1038/nnano.2010.27910.1038/nnano.2010.279 ↗
18. 10.1038/s41565-017-0010-110.1038/s41565-017-0010-1 ↗
19. 10.1038/s41928-020-0433-910.1038/s41928-020-0433-9 ↗
20. 10.1021/nn203715c10.1021/nn203715c ↗
21. 10.1021/acsnano.8b0273910.1021/acsnano.8b02739 ↗
22. 10.1021/acs.nanolett.3c0124810.1021/acs.nanolett.3c01248 ↗
23. 10.1007/s12274-022-4724-510.1007/s12274-022-4724-5 ↗
24. 10.1038/s41928-022-00858-z10.1038/s41928-022-00858-z ↗
25. 10.1126/science.abg316110.1126/science.abg3161 ↗
26. 10.1002/adma.20210775410.1002/adma.202107754 ↗
27. 10.1016/j.esci.2023.10017810.1016/j.esci.2023.100178 ↗
28. 10.1021/nl502741k10.1021/nl502741k ↗
29. 10.1038/s41565-019-0462-610.1038/s41565-019-0462-6 ↗
30. 10.1109/LED.2019.289844810.1109/LED.2019.2898448 ↗
31. 10.1038/s41928-021-00591-z10.1038/s41928-021-00591-z ↗
32. 10.1038/nnano.2017.10410.1038/nnano.2017.104 ↗
33. 10.1109/TCSI.2007.90783510.1109/TCSI.2007.907835 ↗
34. 10.1002/adma.20200530310.1002/adma.202005303 ↗
35. 10.1021/acsnano.9b0281710.1021/acsnano.9b02817 ↗
36. 10.1038/s41928-020-00511-710.1038/s41928-020-00511-7 ↗
37. 10.1038/s41467-022-29795-310.1038/s41467-022-29795-3 ↗
38. 10.1002/adma.20220136410.1002/adma.202201364 ↗
39. 10.1038/nnano.2013.10010.1038/nnano.2013.100 ↗
40. 10.1021/nn202455710.1021/nn2024557 ↗
41. 10.1002/adma.20180447010.1002/adma.201804470 ↗
42. 10.1002/adfm.20241788710.1002/adfm.202417887 ↗
43. 10.1038/s41928-023-01034-710.1038/s41928-023-01034-7 ↗
44. 10.1126/sciadv.aav343010.1126/sciadv.aav3430 ↗
45. 10.1002/adom.20210093710.1002/adom.202100937 ↗
46. 10.1103/PhysRevB.72.22430110.1103/PhysRevB.72.224301 ↗