Acoustically Operated Excitonic Transistor Using Poly(3-hexylthiophene)
Source abstract
Abstract
An organic semiconductor, regioregular poly(3-hexylthiophene) (rrP3HT), based excitonic transistor on a piezoelectric YZ lithium niobate substrate is reported for the first time. The propagating surface acoustic wave (SAW) field ionizes the excitons, stores the charge pair in the SAW modulated potential field in the semiconductor, and carries them forward. A long-range transport ∼4.7 mm at room temperature has been demonstrated. The electrical control of the exciton flux was achieved with SAW propagating through a dual metal–insulator–semiconductor (MIS) structure. The working of the device has been demonstrated using white and green light. A threshold voltage of −20.65 V was observed, and the working mechanism of the proposed device has been verified through numerical analysis using MATLAB. The potential use of the proposed device structure as an all optical device was verified electrically with additional electrode terminals at the output end.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Acoustic Wave Resonator Technologies · Neural Networks and Reservoir Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
Funding
Indian Council of Medical Research · Ministry of Electronics and Information technology · Science and Engineering Research Board · Max-Planck-Gesellschaft
References (36)
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