journal article·2024-11-26Open access

Impact of Indium Doping in Lead-Free (CH3NH3)3Bi2–xInxI9 Perovskite Photovoltaics for Indoor and Outdoor Light Harvesting

Ramesh Kumar, Hairui Liu, Seyed Ali Nabavi, Moses S. Anyebe, Suhas Mahesh, Henry Snaith, Monojit Bag, Sagar M. Jain

ACS Applied Electronic Materials· Volume 6· Issue 11

Abstract

High Resolution Image Download MS PowerPoint Slide Hybrid halide perovskites (HHPs) have revolutionized the field of solar cells due to their low cost, solution-processable synthesis, and exceptional device performance. Although lead (Pb)-based perovskites are currently the most efficient, their application in indoor photovoltaics and wearable electronics is limited by lead’s toxicity. This has intensified the search for Pb-free alternatives, particularly for use in portable electronic devices. In this study, we utilized a vapor-assisted solution process to systematically engineer the composition of bismuth-based perovskite-inspired materials (PIMs) through indium doping, forming homogeneous and pinhole-free (CH 3 NH 3 ) 3 Bi 2– x In x I 9 (Bi–In) films. These bimetallic Bi–In perovskites exhibit enhanced properties, including high recombination resistance, reduced low-frequency capacitance, lower defect density, and minimal microstrain. Electrochemical impedance spectroscopy (EIS) shows significantly reduced ion migration in Bi–In compositions compared with pure bismuth-based counterparts. The optimized Bi–In-based solar cells achieved a power conversion efficiency (PCE) of 2.5% under outdoor illumination and 5.9% under indoor lighting, showcasing their potential as promising lead-free alternatives for photovoltaic applications.
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Research context

OpenAlex topics: Perovskite Materials and Applications · Organic Light-Emitting Diodes Research · Organic and Molecular Conductors Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Renewable and Low Carbon Energy, School of Water, Energy and Environment (SWEE), Cranfield University, Cranfield MK430AL, United Kingdom

Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India

College of Material Science and Engineering, Henan Normal University, Xinxiang 453007, China

Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom

Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, Ontario M5S 1A4, Canada

Funding

Commonwealth Fund · Science and Engineering Research Board · Government of the United Kingdom

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