Imitation of a Dual-Modal Synapse Based on a Hf_{0.5}Zr_{0.5}O₂ Ferroelectric Tunnel Junction for Neuromorphic Computing

Hang Yang; Mengyuan Duan; Chaoyang Kang; Guanghong Yang; Weifeng Zhang; Caihong Jia

doi:10.1021/acsaelm.4c01434

journal article·2024-10-22

Imitation of a Dual-Modal Synapse Based on a Hf_0.5Zr_0.5O₂ Ferroelectric Tunnel Junction for Neuromorphic Computing

Hang Yang, Mengyuan Duan, Chaoyang Kang, Guanghong Yang, Weifeng Zhang, Caihong Jia

ACS Applied Electronic Materials· Volume 6· Issue 10

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Source abstract

Abstract

Bioinspired artificial synapses have attracted considerable attention in the field of neuromorphic computing. Hf 0.5 Zr 0.5 O 2 thin films exhibit robust ferroelectricity even at a thickness of less than 10 nm, which contributes to energy efficiency and fast write/read speed. In this work, we report a low-cost and low-energy consumption dual-modal synapse with both excitation and inhibition in a Hf 0.5 Zr 0.5 O 2 ferroelectric tunnel junction. This transition is controlled by ferroelectric polarization switching and electron trapping by adjusting pulse duration. Furthermore, its excitation effect can simulate logic operations and pain perception nociceptors. The combined excitation and inhibition effects can simulate the dual-pulse Bienenstock–Cooper–Munro learning rule and image edge recognition. This contributes to the development of in-memory computing, image processing, and analog perception systems.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, P. R. China

Key Lab for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng 475004, P. R. China

Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, P. R. China

Funding

Natural Science Foundation of Henan Province · Key Scientific Research Project of Colleges and Universities in Henan Province · Science and Technology Department of Henan Province · National Natural Science Foundation of China · Leading Talent of Fundamental Research of the Central China

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