DataVXACS Applied Electronic MaterialsPaper
journal article·2024-01-23

Improved Gate Stability of Metal–Insulator–Semiconductor-High-Electron-Mobility Transistors with 10 nm Atomic Layer Deposition Al2O3 by Tetramethylammonium Hydroxide Wet Treatment

Yu Li, Jiaan Zhou, Runxian Xing, Shaoqian Lu, An Yang, Bohan Guo, Bosen Liu, Zhongkai Du, Guohao Yu, Zhongming Zeng, Yong Cai, Baoshun Zhang

ACS Applied Electronic Materials· Volume 6· Issue 1
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Source abstract

Abstract

We investigated the impact of predeposition surface treatment with a tetramethylammonium hydroxide (TMAH) solution on the performance of recessed gate metal–insulator–semiconductor-high-electron-mobility transistors (MIS-HEMTs). When applying the forward step stress, gate leakage current of the TMAH-treated device becomes 1 order of magnitude smaller. Step stress tests carried out at various voltages showed a stable threshold voltage with both the reverse gate bias step stress and the off-state drain step stress contributing to the high-quality Al 2 O 3 /AlGaN interfaces. When the temperature was increased to 473 K, the maximum field effective mobility (μ FE ) was improved from 450 to 483 cm 2 /V·s, and on-resistance was improved by ∼6.8%.
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Research context

Electronic materialsMaterials processing

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

Suzhou Powerhouse Electronics Technology Co., Ltd., Suzhou, Jiangsu 215123, China

Funding

Jiangsu Provincial Key Research and Development Program · Key Research and Development Program of Jiangxi Province · Youth Innovation Promotion Association of the Chinese Academy of Sciences · National Natural Science Foundation of China

References (25)

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