journal article·2021-08-24

Full Activation of Dopants by Carbon-free Self-Assembled Molecular Monolayer Doping

Kai Li, Jie-Yin Zhang, Shannan Chang, Hao Wei, Jian-Jun Zhang, Yaping Dan

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Abstract

Self-assembled molecular monolayer doping may find important applications in doping FinFET and nanowire transistors due to its nature of being conformal, nondestructive, and self-limiting. However, carbon contamination from the dopant carrier molecules is often introduced into silicon, which will affect the device performance. Herein, we use carbon-free phosphorus chloride (PCl3) molecules as dopant carrier molecules to avoid the introduction of carbon contamination. The Hall effect measurements and secondary ion mass spectrometry show that the dopant activation rate is close to full activation even for samples with a low doping concentration.
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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, University of Michigan—Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 200240 Shanghai, China

National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China

CAS Center for Excellence in Topological Quantum Computation and School of Physics, University of Chinese Academy of Sciences, 100049 Beijing, China

Funding

Shanghai Municipal Education Commission · National Natural Science Foundation of China

References (22)

Show source-provided references
1. 10.1038/nmat205810.1038/nmat2058 ↗
2. 10.1021/nl052558g10.1021/nl052558g ↗
3. 10.1109/16.1994210.1109/16.19942 ↗
4. 10.1149/2.0011707jss10.1149/2.0011707jss ↗
5. 10.1021/nl803252610.1021/nl8032526 ↗
6. 10.1016/s0927-796x(98)00013-810.1016/s0927-796x(98)00013-8 ↗
7. 10.1109/ted.2003.82156310.1109/ted.2003.821563 ↗
8. 10.1021/acsami.5b0376810.1021/acsami.5b03768 ↗
9. 10.1038/srep4129910.1038/srep41299 ↗
10. 10.1002/adma.20100362510.1002/adma.201003625 ↗
11. 10.1021/acsami.7b0397410.1021/acsami.7b03974 ↗
12. 10.1038/s41467-017-02564-310.1038/s41467-017-02564-3 ↗
13. 10.1063/1.499923210.1063/1.4999232 ↗
14. 10.1021/acsaelm.9b0074810.1021/acsaelm.9b00748 ↗
15. 10.1021/acs.jpcc.8b0254510.1021/acs.jpcc.8b02545 ↗
16. 10.1002/adfm.20120280810.1002/adfm.201202808 ↗
17. 10.1016/j.chemphys.2019.11065810.1016/j.chemphys.2019.110658 ↗
18. 10.1021/acsomega.8b0337210.1021/acsomega.8b03372 ↗
19. 10.1021/acsami.7b1695010.1021/acsami.7b16950 ↗
20. 10.1021/acsami.5b0895210.1021/acsami.5b08952 ↗
21. 10.1021/la001294510.1021/la0012945 ↗
22. 10.1063/1.177994510.1063/1.1779945 ↗