DataVXACS Applied Electronic MaterialsPaper
journal article·2021-09-28Open access

High-Performance and Ultralow-Noise Two-Dimensional Heterostructure Field-Effect Transistors with One-Dimensional Electrical Contacts

Aroop K. Behera, Charles Thomas Harris, Douglas V. Pete, Collin J. Delker, Per Erik Vullum, Marta B. Muniz, Ozhan Koybasi, Takashi Taniguchi, Kenji Watanabe, Branson D. Belle, Suprem R. Das

ACS Applied Electronic Materials· Volume 3· Issue 9
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Source abstract

Abstract

Two-dimensional heterostructure field-effect transistors (2D-HFETs) with one-dimensional electrical contacts to atomically thin channels have recently shown great device performance, such as reduced contact resistance, leading to ballistic transport and enhanced carrier mobility. While a number of low-frequency noise studies exists on bare graphene devices supported on silicon dioxide gate insulators with surface contacts, such studies in heterostructure devices comprising epitaxial graphene on hexagonal boron nitride (hBN) with edge contacts are extremely limited. In this article, we present a systematic, temperature-dependent study of electrical transport and low-frequency noise in edge-contacted high-mobility HFET with a single atomic-layer graphene channel encapsulated by hBN and demonstrate ultralow noise with a Hooge parameter of ≈10–5. By combining measurements and modeling based on underlying microscopic scattering mechanisms caused by charge carriers and phonons, we directly correlate the high-performance, temperature-dependent transport behavior of this device with the noise characteristics. Our study provides a pathway towards engineering low-noise graphene-based high-performance 2D-FETs with one-dimensional edge contacts for applications such as digital electronics and chemical/biological sensing.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Graphene research and applications · Advancements in Semiconductor Devices and Circuit Design · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, Kansas 66506, United States

Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States

Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

Department of Materials and Nanotechnology, SINTEF, Høgskoleringen 5, Trondheim NO-7034, Norway

Department of Sustainable Energy Technology, SINTEF, Forskningsveien 1, Oslo 0373, Norway

Institut de Physique de la Matière Complexe, Ecole Polytechnique Fèdèrale de Lausanne (EPFL), Lausanne 1015, Switzerland

Department of Microsystems and Nanotechnology, SINTEF DIGITAL, Oslo 0373, Norway

International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Department of Electrical and Computer Engineering, Kansas State University, Manhattan, Kansas 66506, United States

Funding

Ministry of Education, Culture, Sports, Science and Technology · Norges Forskningsr??d · Core Research for Evolutional Science and Technology · Japan Society for the Promotion of Science · Division of Chemical, Bioengineering, Environmental, and Transport Systems · National Nuclear Security Administration

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