Three-Dimensional/Two-Dimensional Perovskite-Resistive Random-Access Memory with Low SET Voltage and High Stability

The skyrocketing demand for rapid information storage and processing has propelled the advancement of resistive random-access memories (RRAMs). Lately, RRAMs with organo–inorganic metal halide perovskite (MHP) materials had demonstrated superior memory properties, which were crucial for next-generation memory devices. Herein, a hybrid three-dimensional/two-dimensional (3D/2D) perovskite heterostructure has been manufactured by introducing PEASCN to the top of CH 3 NH 3 PbI 3– x Cl x . The 3D/2D RRAM device exhibited outstanding resistive switching (RS) properties with a stable window (∼10 3 ), remarkable endurance property (>10 3 cycles), low SET voltage (∼0.6 V), and high stability (storage period ≥150 days) compared with the 3D counterparts. Furthermore, the flexible RRAM also demonstrated excellent stability with the window of about 10 4 and conspicuous consistency under several stretching cycles. These provided an emerging route to develop high-performance MHP RRAMs.