High-Performance Organic Field-Effect Transistors Using Rare Earth Metal Oxides as Dielectrics
Abstract
Research context
OpenAlex topics: Semiconductor materials and devices · Organic Electronics and Photovoltaics · Advanced Memory and Neural Computing
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Affiliations
Federal Research Center of Problems of Chemical Physics and Medicinal Chemistry, Russian Academy of Sciences, (FRC PCP MC RAS), Academician Semenov Avenue 1, Chernogolovka, Moscow Region, 142432, Russian Federation
Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow, 143026, Russian Federation
Institute of Physics and Technology, Ural Federal University, Mira Street 19, Yekaterinburg, 620108, Russian Federation
M. N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, S. Kovalevskoi Street 18, Yekaterinburg, 620108, Russian Federation
Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
Chernogolovka branch of the N.N. Semenov Federal Research Center for Chemical Physics of RAS, Academician Semenov Street 1/10, Chernogolovka, 142432, Russian Federation
Harbin Institute of Technology, 92 West Dazhi Street, Nan Gang District, Harbin, Heilongjiang Province 150001, China
Zhengzhou Research Institute of HIT, 26 Longyuan East 7th, Jinshui District, Zhengzhou, Henan Province, 450000, China
Funding
Ministry of Science and Higher Education of Russian Federation