Defect-Induced Different Band Alignment and Transport of All-Phosphorene Devices from First Principles
Source abstract
Abstract
Defects are unavoidable in the preparation of materials and can significantly impact the properties of two-dimensional material-based devices. In this work, we proposed and investigated theoretically an all-phosphorene device, in which single vacancy (SV) and double vacancy (DV) defects were considered. It was found that the SV defect changed the original Schottky contact of the all-phosphorene device into a contact similar to that of a metal and a p-type doped semiconductor; the DV defect introduced some impurity states in the forbidden band. The impurity states expanded in a zigzag direction and localized in the armchair direction. The different electronic structures caused by the defects resulting in currents also exhibited defect-related anisotropic characteristics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China
College of Communications and Electronics Engineering, Qiqihar University, Qiqihar 161006, China
Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China
Funding
Harbin Normal University · Natural Science Foundation of Heilongjiang Province · Department of Education, Heilongjiang Province
References (44)
Show source-provided references
1. 10.1039/D1CP04214A10.1039/D1CP04214A ↗
2. 10.1039/c3nr33218g10.1039/c3nr33218g ↗
3. 10.1039/D1MA00660F10.1039/D1MA00660F ↗
4. 10.1021/acsami.1c1916310.1021/acsami.1c19163 ↗
5. 10.1103/RevModPhys.81.10910.1103/RevModPhys.81.109 ↗
6. 10.1021/acs.nanolett.5b0506810.1021/acs.nanolett.5b05068 ↗
7. 10.1039/C9CP02790D10.1039/C9CP02790D ↗
8. 10.1039/C6CP04508A10.1039/C6CP04508A ↗
9. 10.1039/C9NR04895B10.1039/C9NR04895B ↗
10. 10.1126/science.110289610.1126/science.1102896 ↗
11. 10.1038/nnano.2015.11210.1038/nnano.2015.112 ↗
12. 10.1038/srep0667710.1038/srep06677 ↗
13. 10.1038/ncomms957210.1038/ncomms9572 ↗
14. 10.1021/acsami.7b1145410.1021/acsami.7b11454 ↗
15. 10.1186/s11671-016-1296-x10.1186/s11671-016-1296-x ↗
16. 10.1016/j.spmi.2016.10.09010.1016/j.spmi.2016.10.090 ↗
17. 10.1021/acsaelm.0c0060310.1021/acsaelm.0c00603 ↗
18. 10.1021/acsami.8b0470010.1021/acsami.8b04700 ↗
19. 10.1002/smll.20170208210.1002/smll.201702082 ↗
20. 10.1021/acsaelm.0c0059210.1021/acsaelm.0c00592 ↗
21. 10.1021/acsami.9b1347210.1021/acsami.9b13472 ↗
22. 10.1038/srep1084810.1038/srep10848 ↗
23. 10.1021/am403427h10.1021/am403427h ↗
24. 10.1021/acsnano.7b0856610.1021/acsnano.7b08566 ↗
25. 10.1039/C8NR06640J10.1039/C8NR06640J ↗
26. 10.1021/jacs.6b0492610.1021/jacs.6b04926 ↗
27. 10.1002/adfm.20190199110.1002/adfm.201901991 ↗
28. 10.1016/j.apsusc.2020.14858810.1016/j.apsusc.2020.148588 ↗
29. 10.1021/acs.jpcc.5b0607710.1021/acs.jpcc.5b06077 ↗
30. 10.1063/1.501698810.1063/1.5016988 ↗
31. 10.1021/acs.nanolett.7b0076610.1021/acs.nanolett.7b00766 ↗
32. 10.1038/srep1248210.1038/srep12482 ↗
33. 10.1103/PhysRevLett.112.17680110.1103/PhysRevLett.112.176801 ↗
34. 10.1103/PhysRev.136.B86410.1103/PhysRev.136.B864 ↗
35. 10.1103/PhysRevB.50.1318110.1103/PhysRevB.50.13181 ↗
36. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
37. 10.1103/PhysRevB.13.518810.1103/PhysRevB.13.5188 ↗
38. 10.1103/PhysRevB.45.667010.1103/PhysRevB.45.6670 ↗
39. 10.1103/PhysRevB.63.24540710.1103/PhysRevB.63.245407 ↗
40. 10.1103/PhysRevB.23.504810.1103/PhysRevB.23.5048 ↗
41. 10.1088/0953-8984/14/11/30210.1088/0953-8984/14/11/302 ↗
42. 10.1103/PhysRevB.43.221310.1103/PhysRevB.43.2213 ↗
43. 10.1103/PhysRevB.50.552810.1103/PhysRevB.50.5528 ↗
44. 10.1021/acs.jpcc.9b0851810.1021/acs.jpcc.9b08518 ↗