Efficiency enhancement of perovskite solar cells based on Al2O3-passivated nano-nickel oxide film
Source abstract
Abstract
Interface passivation plays a significant role in reducing surface defects in semiconductor materials. In this paper, we present a kind of Al2O3-passivated nickel oxide (NiO) film as hole transport layer for the perovskite solar cells (PSCs). The optimal Al2O3 insulating film between the NiO and perovskite active layers has a capability to decrease the defect states density at the surface of NiO and suppress the carriers recombination at NiO/perovskite interface. The passivation process could apparently improve the efficiencies of corresponding PSCs from 5.64 to 7.12%. Steady-state photoluminescence and transient time-resolved photoluminescence (TRPL) results demonstrate the restraint of charge recombination at the NiO/perovskite interface with passivation. The Hall effect test further shows that the electrical properties of the NiO film can be improved by adjusting the precursor concentration of the Al2O3, which has a certain significance for the application of interface engineering in PSCs. Furthermore, this method has the advantages of simple operation, low cost, and strong reproducibility, which is also good for the working stability of PSCs.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (40)
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