journal article·2019-10-22Open access

Crystal Structure Built from a GeO6–GeO5 Polyhedra Network with High Thermal Stability: β–SrGe2O5

Christian A. Niedermeier, Jun-ichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

ACS Applied Electronic Materials· Volume 1· Issue 10

Abstract

By tackling the challenge of extending transparent oxide semiconductors to Ge-based oxides, we have found a not-yet-reported crystal structure, named β-SrGe2O5, which is composed of edge-sharing GeO6 octahedra interconnected by GeO5 bipyramids. Single crystals were successfully grown by the high-pressure flux method. β-SrGe2O5 has a band gap of 5.2 eV and a dispersive conduction band with an effective mass as small as 0.34 times the electron rest mass, which originates from the edge-sharing GeO6 octahedra network. Although known compounds with octahedral GeO6 coordination are commonly unstable at atmospheric pressure and elevated temperatures, β-SrGe2O5 exhibits thermal stability up to 700 °C.
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Research context

OpenAlex topics: Ga2O3 and related materials · Luminescence Properties of Advanced Materials · Electronic and Structural Properties of Oxides

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