Binary semiconductor In2Te3 for the application of phase-change memory device

Nonvolatile phase-change memory devices with 500 nm contact hole based on In2Te3 were successfully fabricated by using focused ion beam, pulsed laser deposition, and dc magnetic sputtering techniques. In2Te3 films were characterized by using differential thermal analysis, X-ray diffraction, and UV–vis diffuse absorption spectroscopy, respectively. The devices can be switched between high and low resistance states repeatedly with the programmed voltage pulses. The reset operation (crystalline to amorphous) was done by the voltage pulse with a magnitude of 3.5 V and a duration of 30 ns, and the set operation (amorphous to crystalline) was done by the voltage pulse with a magnitude of 1.4 V and a duration of 100 ns. A dynamic resistance switching ratio (OFF/ON ratio) of 3.2 × 103 has been obtained.