Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide Encouraged by the outstanding performance of pentacene, the perspective over enhanced organic semiconductors has been focused on studying analogous ladder-type materials. In this context, the case of the diindolo[3,2- b:2′,3′- h ]carbazole core is a promising example of a semiconductor with improved stability. Herein, we report the synthesis of five diindolo[3,2- b:2′,3′- h ]carbazole derivatives displaying different alkylation patterning, as well as their integration in organic thin-film transistors. The elucidation of the single-crystal structures of three of the derivatives, accomplished by means of powder X-ray diffraction (PXRD), provided further insight into the intermolecular disposition of this core. As a result, the relationship between the structural design and the performance of the final devices could be analyzed. Globally, a scope of mobility values from 10 –6 to 10 –3 cm 2 V –1 s –1 was achieved by just fine-tuning the length of the alkyl chains and the type of passivation layer applied onto the SiO 2 surface. Remarkably, all the fabricated devices excel in terms of temporal and air stability with a shelf lifetime up to years, a coveted feature in organic electronics that confirms the potential of this core.
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Affiliations
Grup de Materials Orgànics, Institut de Nanociència i Nanotecnologia (IN2UB), Departament de Química Inorgànica i Orgànica, Secció de Química Orgànica, Universitat de Barcelona, Martí i Franquès 1, E-08028 Barcelona, Spain
X-ray Diffraction Unit, Scientific and Technological Centers, University of Barcelona, Lluís Solé i Sabarís 1-3, E-08028 Barcelona, Spain
Dept. Enginyeria Electrònica, Universitat Politècnica de Catalunya, Jordi Girona 1−3, E-08034 Barcelona, Spain
Funding
Ministerio de Econom?a y Competitividad · Generalitat de Catalunya