Mie-Type Surface Texture-Integrated Visible and Short-Wave Infrared InGaAs/InP Focal Plane Arrays

Semiconductor nanostructures with high refractive indexes are highly promising to serve as a broadband omnidirectional antireflection layer for optoelectronic device applications. InP nanopillar arrays are designed and fabricated on the backside surface of an InGaAs/InP focal plane array (FPA) via a colloidal lithography and etching process. With broadband scattering resonances, the low-aspect-ratio and quasi-periodic InP nanopillars act as Mie resonators and couple more light into the InGaAs layer by reducing absorption loss in the InP contact layer. Broadband low reflectivity down to 5%, 10–20% enhanced quantum efficiency, and 18.8% higher FPA response are realized over the wavelength range of 500–1700 nm. These results demonstrate that the InP Mie resonators can significantly improve the performance of large-format InGaAs FPAs without image quality degradation.