Sub-5 nm Monolayer BiH Transistors

Two-dimensional (2D) semiconductors are expected to be suitable channel materials for next-generation transistors because of their ultrathin thickness and smooth surface. Monolayer (ML) BiH (bismuthane) is predicted to have a bandgap of about 1.0 eV opened by spin–orbital coupling (SOC). In this article, we provide the first investigation of the performance limits of ML BiH transistors based on ab initio quantum transport simulation methods with full consideration of the SOC effect. The performance limits of the optimized 5 nm ML BiH transistor can satisfy the high-performance device requirement of the International Technology Roadmap for Semiconductors in the next decade, so ML BiH is attractive for applications in nanoelectronics.