Structural characterization and transistor properties of thickness-controllable MoS2 thin films
Source abstract
Abstract
We report an optimized multi-step chemical vapor deposition process for growing MoS2 thin films. This process enables large-area processing, film patterning simply by using shadow masks, and precise control of the final thickness by changing the initial thickness of the first step of MoO3 film deposition. The structural characterization of the MoS2 films is performed with transmission electron microscopy and X-ray diffraction as a function of film thickness. MoS2 film with a thickness of 3 nm possesses a highly crystalline structure with a spacing of 0.62 nm. The crystallinity and orientation of the films are degraded with increased film thickness. Careful analysis by time-of-flight secondary ion mass spectroscopy reveals that a film with a thickness of 9 nm is not completely sulfurized, and unreacted MoO3 is left at the bottom of the film. These fundamental analyses coincide with the thickness dependence of thin-film transistor (TFT) performance. A TFT with the optimal film thickness of 3 nm achieves high performance, namely a carrier mobility of 0.57 cm2 V−1 s−1 and an on/off ratio of ~ 102.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · ZnO doping and properties
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References (59)
Show source-provided references
1. Meng X, Yang D, Fang Y, Ye H, Su W (2018) Observation of high-frequency raman modes in FeCl3- and Zn-intercalated MoS2 flakes. J Nanosci Nanotechnol 18:5049–505310.1166/jnn.2018.15297 ↗
2. Qi R, Hu Y, Li W, Wang Y, Li J, Zhang G, Shang Y, Yang Z (2017) Effects of intercalating polysilanes into MoS2 interlaminar spaces on transport property. Nanosci Nanotechnol Lett 9:1287–129710.1166/nnl.2017.2437 ↗
3. Kaur M, Umar A, Kumar MS, Singh S, Kansal SK (2017) Visible-light photocatalytic degradation of organic pollutants using molybdenum disulfide (MoS2) microtubes. Nanosci Nanotechnol Lett 9:1966–197410.1166/nnl.2017.2591 ↗
4. Feng Y, Ding L, Ji D, Wang L, Guo W (2018) Highly rectified ion transport through 2D WSe2/MoS2 bi-layered membranes. Chin Chem Lett 29(6):892–89410.1016/j.cclet.2018.01.053 ↗
5. Guo ZY, Zhong Y, Liu Y, Mao CM, Li GC (2017) MoS2 nanosheet arrays supported on hierarchical porous carbon with enhanced lithium storage properties. Chin Chem Lett 28(4):743–74710.1016/j.cclet.2016.10.007 ↗
6. Han C, Tian Z, Dou H, Wang X, Yang X (2018) Vertical crosslinking MoS2/three-dimensional graphene composite towards high performance supercapacitor. Chin Chem Lett 29(4):606–61110.1016/j.cclet.2018.01.017 ↗
7. Voiry D, Salehi M, Silva R, Fujita T, Chen M, Asefa T, Shenoy VB, Eda G, Chhowalla M (2013) Conducting MoS2 nanosheets as catalysts for hydrogen evolution reaction. Nano Lett 13:6222–622710.1021/nl403661s ↗
8. Cho B, Hahm MG, Choi M, Yoon J, Kim AR, Lee Y-J, Park S-G, Kwon J-D, Kim CS, Song M, Jeong Y, Nam K-S, Lee S, Yoo TJ, Kang CG, Lee BH, Ko HC, Ajayan PM, Kim D-H (2015) Charge-transfer-based gas sensing using atomic-layer MoS2. Sci Rep 5:8052-1-6
9. Wu W, Wang L, Li Y, Zhang F, Lin L, Niu S, Chenet D, Zhang X, Hao Y, Heinz TF, Hone J, Wang ZL (2014) Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature 514:470–47410.1038/nature13792 ↗
10. Chang K, Chen W (2011) L-cysteine-assisted synthesis of layered MoS2/graphene composites with excellent electrochemical performances for lithium ion batteries. ACS Nano 5:4720–472810.1021/nn200659w ↗
11. Chen J, Kuriyama N, Yuan H, Tsutsui H, Takeshita TIA, Sakai T (2001) Electrochemical hydrogen storage in MoS2 nanotubes. J Am Chem Soc 123:11813–1181410.1021/ja017121z ↗
12. Huo N, Kang J, Wei Z, Li SS, Li J, Wei SH (2014) Novel and enhanced optoelectronic performances of multilayer MoS2–WS2 heterostructure transistors. Adv Funct Mater 24:7025–703110.1002/adfm.201401504 ↗
13. Sanchez OL, Lembke D, Kayci M, Radenovic A, Kis A (2013) Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol 8:497–50110.1038/nnano.2013.100 ↗
14. Li H, Wu J, Yin Z, Zhang H (2014) Preparation and applications of mechanically exfoliated single-layer and multilayer MoS2 and WSe2 Nanosheets. Acc Chem Res 47:1067–107510.1021/ar4002312 ↗
15. Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M (2011) Photoluminescence from chemically exfoliated MoS2. Nano Lett 11:5111–511610.1021/nl201874w ↗
16. Samad L, Bladow SM, Ding Q, Zhuo J, Jacobberger RM, Arnold MS, Jin S (2016) Layer-controlled chemical vapor deposition growth of MoS2 vertical heterostructures via van der Waals epitaxy. ACS Nano 10:7039–704610.1021/acsnano.6b03112 ↗
17. Zhang W, Huang JK, Chen CH, Chang YH, Cheng YJ, Li LJ (2013) High gain phototransistors based on a CVD MoS2 monolayer. Adv Mater 25:3456–346110.1002/adma.201301244 ↗
18. Liu K-K, Zhang W, Lee Y-H, Lin Y-C, Chang M-T, Su C-Y, Chang C-S, Li H, Shi Y, Zhang H, Lai C-S, Li L-J (2012) Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett 1:1538–154410.1021/nl2043612 ↗
19. Zhan YJ, Liu Z, Najmaei S, Ajayan PM, Lou J (2012) Large area vapor phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8:966–97110.1002/smll.201102654 ↗
20. Huang Z, Zhang L, Li M, Ran W, Lu Y, Yang B, Long Z (2017) Hollow tubular morphology of MoS2 via the solvothermal method with a single source precursor. Nanosci Nanotechnol Lett 9:56–6010.1166/nnl.2017.2267 ↗
21. Zhang C, Li X, Lian C, Hu C, Duo S, Hu Q (2018) Few-layered MoS2 synthesized by hydrothermal method with improved adsorption capacity for methylene blue than active carbon. J Nanosci Nanotechnol 18:7948–795110.1166/jnn.2018.16108 ↗
22. Lee YH, Zhang XQ, Zhang WJ, Chang MT, Lin CT, Chang KD, Yu YC, Wang JTW, Chang CS, Li LJ, Lin TW (2012) Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv Mater 24:2320–232510.1002/adma.201104798 ↗
23. Najmaei S, Liu Z, Zhou W, Zou XL, Shi G, Lei SD, Yakobson BI, Idrobo JC, Ajayan PM, Lou J (2013) Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat Mater 12:754–75910.1038/nmat3673 ↗
24. Wang XS, Feng HB, Wu YM, Jiao LY (2013) Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J Am Chem Soc 135:5304–530710.1021/ja4013485 ↗
25. Lin YC, Zhang WJ, Huang JK, Liu KK, Lee YH, Liang CT, Chu CW, Li LJ (2012) Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization. Nanoscale 4:6637–664110.1039/c2nr31833d ↗
26. Lee YH, Yu LL, Wang H, Fang WJ, Ling X, Shi YM, Lin CT, Huang JK, Chang MT, Chang CS, Dresselhaus M, Palacios T, Li LJ, Kong J (2013) Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces. Nano Lett 13:1852–185710.1021/nl400687n ↗
27. Ji QQ, Zhang YF, Gao T, Zhang Y, Ma DL, Liu MX, Chen YB, Qiao XF, Tan PH, Kan M, Feng J, Sun Q, Liu ZF (2013) Epitaxial monolayer MoS2 on mica with novel photoluminescence. Nano Lett 13:3870–387710.1021/nl401938t ↗
28. Ling X, Lee YH, Lin YX, Fang WJ, Yu LL, Dresselhaus MS, Kong J (2014) Role of the seeding promoter in MoS2 growth by chemical vapor deposition. Nano Lett 14:464–47210.1021/nl4033704 ↗
29. Jeon J, Lee J, Yoo G, Park JH, Yeom GY, Jang YH, Lee S (2016) Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices. Nanoscale 8:16995–1700310.1039/C6NR04456E ↗
30. Schmidt H, Wang S, Chu L, Toh M, Kumar R, Zhao W, Neto AHC, Martin J, Adam S, Özyilmaz B, Eda G (2014) Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett 14:1909–191310.1021/nl4046922 ↗
31. Feng Q, Zhu Y, Hong J, Zhang M, Duan W, Mao N, Wu J, Xu H, Dong F, Lin F, Jin C, Wang C, Zhang J, Xie L (2014) Growth of large-area 2D MoS2(1-x)Se2x semiconductor alloys. Adv Mater 26:2648–265310.1002/adma.201306095 ↗
32. Yu Z, Pan Y, Shen Y, Wang Z, Ong Z-Y, Xu T, Xin R, Pan L, Wang B, Sun L, Wang J, Zhang G, Zhang YW, Shi Y, Wang X (2014) Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat Commun 5:5290-1-7
33. Radisavljevic B, Kis A (2013) Mobility engineering and a metal-insulator transition in monolayer MoS2. Nat Mater 12:815–82010.1038/nmat3687 ↗
34. Qiu H, Pan L, Yao Z, Li J, Shi Y, Wang X (2012) Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances. Appl Phys Lett 100:123104-1
35. Wang H, Yu L, Lee Y-H, Shi Y, Hsu A, Chin ML, Li L-J, Dubey M, Kong J, Palacios T (2012) Integrated circuits based on bilayer MoS2 transistors. Nano Lett 12:4674–468010.1021/nl302015v ↗
36. Fuhrer MS, Hone J (2013) Measurement of mobility in dual-gated MoS2 transistors. Nat Nanotech 8:146–14710.1038/nnano.2013.30 ↗
37. Kaasbjerg K, Thygesen KS, Jacobsen KW (2012) Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys Rev B 85:115317-1
38. Jiang C, Rumyantsev S, Samnakay R, Shur M, Balandin A (2015) High-temperature performance of MoS2 thin-film transistors: direct current and pulse current-voltage characteristics. J Appl Phys 117:064301-1-6
39. Yue Q, Shao Z, Chang S, Li J (2013) Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field. Nanoscale Res Lett 8:425-1-710.1186/1556-276X-8-425 ↗
40. Walter TN, Kwok F, Simchi H, Aldosari HM, Mohney SE (2017) Oxidation and oxidative vapor-phase etching of few-layer MoS2. J Vac Sci Technol, B 35:02120310.1116/1.4975144 ↗
41. Heo S, Ishiguro Y, Hayakawa R, Chikyow T, Wakayama Y (2016) Perspective: highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process. APL Mater 4:030901-1-710.1063/1.4943288 ↗
42. Heo S, Hayakawa R, Wakayama Y (2017) Carrier transport properties of MoS2 field-effect transistors produced by multi-step chemical vapor deposition method. J Appl Phys 121:024301-1-610.1063/1.4973491 ↗
43. Yoon Y, Ganapathi K, Salahuddin S (2011) How good can monolayer MoS2 transistors be? Nano Lett 11:3768–377310.1021/nl2018178 ↗
44. Amin R, Hossain MdA, Zakaria Y (2018) Interfacial kinetics and ionic diffusivity of the electrodeposited MoS2 film. Appl Mater Interfaces 10:13509–1351810.1021/acsami.8b01104 ↗
45. Gatensby R, McEvoy N, Lee K, Hallam T, Berner NC, Rezvani E, Winters S, Georg MO, Duesberg S (2014) Controlled synthesis of transition metal dichalcogenide thin films for electronic applications. Appl Surf Sci 297:139–14610.1016/j.apsusc.2014.01.103 ↗
46. Wang XS, Feng HB, Wu YM, Jiao LY (2013) Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J Am Chem Soc 135:5304–530710.1021/ja4013485 ↗
47. Lince JR, Hilton MR, Bommannavar AS (1990) Oxygen substitution in sputter-deposited MoS2 films studied by extended X-ray absorption fine structure. X-ray photoelectron spectroscopy and X-ray diffraction, Surf Coat Technol 44:640–651
48. Li XL, Li YD (2003) Formation of MoS2 inorganic fullerenes (IFs) by the reaction of MoO3 nanobelts and S. Chem Eur J 9:2726–273110.1002/chem.200204635 ↗
49. Park J, Choudhary N, Smith J, Lee G, Kim M, Choi W (2015) Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices. Appl Phys Lett 106:012104-1-5
50. Greve DW (1998) Field Effect Devices and Applications: Devices for Portable, Low-Power, and Imaging Systems, 1st edn. Prentice Hall, New Jersey, p 87
51. Shah PB, Amani M, Chin ML, O’Regan TP, Crowne FJ, Dubey M (2014) Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications. Solid State Electron 91:87–9010.1016/j.sse.2013.10.010 ↗
52. Zhou W, Zou X, Najmaei S, Liu Z, Shi Y, Kong J, Lou J, Ajayan PM, Yakobson BI, Idrobo J-C (2013) Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett 13:2615–262210.1021/nl4007479 ↗
53. Ghatak S, Pal AN, Ghosh A (2011) Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano 5:7707–771210.1021/nn202852j ↗
54. Qiu H, Xu T, Wang Z, Ren W, Nan H, Ni Z, Chen Q, Yuan S, Miao F, Song F, Long G, Shi Y, Sun L, Wang J, Wang X (2013) Hopping transport through defect-induced localized states in molybdenum disulphide. Nat Commun 4:2642-1-6
55. Late DJ, Liu B, Matte HSSR, Dravid VP, Rao CNR (2012) Hysteresis in single-layer MoS2 field effect transistors. ACS Nano 6:5635–564110.1021/nn301572c ↗
56. Na J, Joo M-K, Shin M, Huh J, Kim J-S, Piao M, Jin J-E, Jang H-K, Choi HJ, Shim JH, Kim G-T (2014) Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation. Nanoscale 6:433–44110.1039/C3NR04218A ↗
57. Park W, Park J, Jang J, Lee H, Jeong H, Cho K, Hong S, Lee T (2013) Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors. Nanotechnology 24:095202-1-5
58. Perera MM, Lin M-W, Chuang H-J, Chamlagain BP, Wang C, Tan X, Cheng MM-C, Tománek Dband Zhou Z (2013) Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating. ACS Nano 7:4449–445810.1021/nn401053g ↗
59. Zhu W, Low T, Lee Y-H, Wang H, Farmer DB, Kong J, Xia F, Avouris P (2014) Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat Commun 5:3087-1-8