Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics–Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
Source abstract
Abstract
Single-crystal silicon (Si) of six monolayer thickness was epitaxially grown on epi-germanium (Ge) in the (001) orientation at substrate temperatures lower than 300 °C, followed by direct deposition of hafnium oxide (HfO2) and aluminum oxide (Al2O3) under ultra-high vacuum. We monitored and studied the Si growth and its epitaxy with the epi-Ge substrate using in-situ reflection high-energy electron diffraction and high-resolution synchrotron radiation X-ray diffraction. Using the gate stacks, we obtained interfacial trap densities of (1–3) × 1011 eV–1 cm–2 without the use of high-pressure hydrogen annealing and a highly reliable Ge p-type metal-oxide semiconductor with a high acceleration factor of 11.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan, ROC
National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, ROC
Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan, ROC
Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC
Funding
Ministry of Science and Technology, Taiwan
References (31)
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