Direct Production of Silicon Nanostructures with Electrochemical Nanoimprinting
Source abstract
Abstract
We demonstrate an electrochemical nanoimprinting process—termed as Mac-Imprint—to produce different silicon nanostructures. A master stamp featuring high-aspect-ratio nanostructures with Ta film as the blocking layer and Au nanostructures as the catalyst is realized by electron-beam lithography followed by Au electroplating. In particular, we investigate the generated monocrystalline silicon nanostructure characteristics and realize a 20 nm minimum feature size. Moreover, we demonstrate the creation of structural color image of a rooster with an average pixel size of 300 nm (∼42 000 dpi). Our results suggest that such a simple process has prospective applications ranging from optoelectronics to luminescent devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nanofabrication and Lithography Techniques · Nanowire Synthesis and Applications · Advanced Surface Polishing Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, People’s Republic of China
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China
References (24)
Show source-provided references
1. 10.1021/nl304715p10.1021/nl304715p ↗
2. 10.1063/1.11485110.1063/1.114851 ↗
3. 10.1126/science.272.5258.8510.1126/science.272.5258.85 ↗
4. 10.1186/1556-276X-9-32010.1186/1556-276X-9-320 ↗
5. 10.1002/adma.20060088210.1002/adma.200600882 ↗
6. 10.1116/1.58975210.1116/1.589752 ↗
7. 10.1002/adfm.20150515310.1002/adfm.201505153 ↗
8. 10.1115/MSEC2016-883510.1115/MSEC2016-8835 ↗
9. 10.1016/j.elecom.2016.12.00410.1016/j.elecom.2016.12.004 ↗
10. 10.1039/C6SC04091H10.1039/C6SC04091H ↗
11. 10.1039/C7NR01777D10.1039/C7NR01777D ↗
12. 10.1021/acsnano.7b0748010.1021/acsnano.7b07480 ↗
13. 10.1021/acsami.9b0045610.1021/acsami.9b00456 ↗
14. 10.3389/fchem.2019.0025610.3389/fchem.2019.00256 ↗
15. 10.1016/j.elecom.2017.01.01410.1016/j.elecom.2017.01.014 ↗
16. 10.1063/1.131919110.1063/1.1319191 ↗
17. 10.1073/pnas.182042011610.1073/pnas.1820420116 ↗
18. 10.1038/srep3658210.1038/srep36582 ↗
19. 10.1002/adma.20100178410.1002/adma.201001784 ↗
20. 10.1016/j.electacta.2008.03.00910.1016/j.electacta.2008.03.009 ↗
21. 10.1021/jp303422710.1021/jp3034227 ↗
22. 10.1088/0957-4484/24/22/22530510.1088/0957-4484/24/22/225305 ↗
23. 10.1021/acs.nanolett.7b0342110.1021/acs.nanolett.7b03421 ↗
24. 10.1021/acs.nanolett.7b0361310.1021/acs.nanolett.7b03613 ↗