Pressure dependence of energy gap of III–V and II–VI ternary semiconductors
Source abstract
Abstract
A general expression for the pressure dependence of the energy gap of a series of group III–V and group II–VI ternary semiconductors have been derived based on Van Vechten’s dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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