Self-Powered Photodetector of Bi 0.5 Sb 1.5 Te 3 /Si with Ultrafast Response
Source abstract
Abstract
Bi 0.5 Sb 1.5 Te 3 (BST) has attracted much attention owing to its special physical properties, including strong surface carrier mobility and narrow band gap. In this study, the photoelectric performance of the photodetector based on BST/Si heterojunctions was systematically investigated. Our photodetector accomplishes a large self-powered position sensitivity (405 mV/mm) and a detectivity of 3.1 × 10 11 Jones. The relaxation times of the lateral photovoltaic voltage reached 0.106 μs. The BST/Si heterojunction achieves broad-spectrum photodetection covering a spectrum from visible light to the infrared wavelength range, with a photoelectrical bandwidth exceeding 15 kHz. This research demonstrates the considerable potential of ultrafast response photodetectors for self-powered position-sensitive detectors, imaging, and object recognition in future.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Semiconductor Detectors and Materials · Advanced Thermoelectric Materials and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics
Harbin Institute of Technology
Frontiers Science Center for Matter Behave in Space Environment
Zhengzhou Research Institute
National Key Laboratory of Science and Technology on Advanced Composites in Special Environments
Funding
National Key Research and Development Program of China · National Science Fund for Distinguished Young Scholars · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Heilongjiang Province
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