Fine-Tuned V _th for Logic Reconfigurability in Dual-Gate Zinc Oxynitride Transistors

Dual-gate transistors enable tunable electrical behavior by introducing a second gate electrode, offering enhanced control over channel formation and threshold voltage ( V th ). Here, we report a dual-gate-controlled ZnON thin-film transistor (DGC-TFT) capable of finely modulating V th (Δ V = 0.34 to 0.54 V) through independent top and bottom gate inputs. By characterizing the transfer and output curves under various bias combinations, we reveal systematic V th shifts and dual-channel switching behavior arising from asymmetric gate dielectrics, organic parylene (top) and SiO 2 (bottom). Finite-element TCAD simulations provide insights into the potential profiles, carrier distributions, and gate coupling mechanisms governing this behavior. Through this precise gate control, we demonstrate a dynamically tunable complementary inverter and implement five distinct logic functions (inverter, AND, OR, NAND, and NOR) using a single DGC-TFT device. These results highlight the promise of dual-gate architectures for compact, reconfigurable logic systems and adaptive circuit design.