Two-Inch Y-Doped Hf _0.5 Zr _0.5 O ₂ Ferroelectric Films Fabricated by Chemical Solution Deposition

Ultralow-power logic devices are the future of electronics, achieving maximum power efficiency with minimal input power consumption. One of the biggest challenges in electronics today is tackling the issues of short-channel effects and high operating voltages, which are resolved by integrating ferroelectric negative capacitors into a conventional gate stack of two-dimensional field-effect transistors. As an excellent noncentral symmetric adjacent phase crystalline ferroelectric material, Y: Hf 0.5 Zr 0.5 O 2 (Y-HZO) is compatible with complementary metal oxide semiconductor technology. It is the most promising candidate for ferroelectric negative capacitance. This study marks the first successful growth of high-quality Y-HZO on a large silicon substrate using the sol–gel method. Ferroelectric field-effect transistors (FeFET) were fabricated with stacked ferroelectric Y-HZO and integrated into a molybdenum disulfide channel to achieve steep switching and low power consumption. The FeFET demonstrated a threshold voltage of 8.8 V, a subthreshold swing (SS) of 24.95 mV/dec, and a hysteresis window of 2 V.