Nanoscale defects and microwave properties of (BaSr)TiO3 ferroelectric thin films
Source abstract
Abstract
Thin film ferroelectrics may have important applications in microwave devices but in general have significantly worse properties than bulk material. This is principally because of secondary and point defects. The natures of the defects are reviewed and strategies to study and remove them outlined.
The source flagged this abstract for review. Check formulas and completeness against the original publication.
Source: openaire · Quality: needs review · Source record ↗
Source flags: short_text
Source flags: short_text
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Acoustic Wave Resonator Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (81)
Show source-provided references
1. Jackson CM, Kobayashi JH, Lee A, Pettiette-Hall C, Burch JF, Hu R, Hilton R, McDade J (1992) Microw Opt Technol Lett 5(72):2
2. Carroll KR, Pond JM, Chrisey DB, Horwitz JS, Leuchtner RE, Grabowski KS (1993) Appl Phys Lett 62:184510.1063/1.109522 ↗
3. Galt D, Price JC, Beall JA, Ono RH (1993) Appl Phys Lett 63:307810.1063/1.110238 ↗
4. Hermann AM, Yandrofski RM, Scott JF, Naziripour A, Galt D, Price JC, Cuchario J, Ahrenkiel RK (1994) J Supercond 7:46310.1007/BF00724590 ↗
5. Vendik OG, Hollman EK, Kozyrev AB, Prudan AM (1999) J Supercond 12:32510.1023/A:1007797131173 ↗
6. Miranda FA, Mueller CH, Cubbage CD, Bhasin KB, Singh RK, Harkness SD (1995) IEEE Trans Appl Supercond 5:319110.1109/77.403270 ↗
7. Scott JF (2007) In: Bussmann-Holder A, Keller H (eds) High Tc superconductors and related transition metal oxides. Springer-Verlag, Berlin
8. Tagantsev AK, Sherman VO, Astafiev KF, Ventkatesh J, Setter N (2003) J Electroceramics 11:510.1023/B:JECR.0000015661.81386.e6 ↗
9. Bao P, Jackson TJ, Wang X, Lancaster MJ (2008) J Phys D 41:06300110.1088/0022-3727/41/6/063001 ↗
10. Hollmann EK, Vendik OG, Zaitsev AG, Melekh BT (1994) Sci Technol 7:609
11. Poplavko YM, Tsykalov VG, Molchanov VI (1969) Sov Phys Solid State 10:2708
12. Baniecki JD, Laibowitz RB, Shaw TM, Duncombe PR, Neumayer DA, Kotecki DE, Shen H, Ma QY (1998) Appl Phys Lett 72:49810.1063/1.120796 ↗
13. Gevorgian S, Petrov PK, Ivanov Z, Wikborg E (2001) Phys Lett 79:1861
14. Booth JC, Takeuchi I, Chang KS (2005) Appl Phys Lett 87:08290810.1063/1.2033139 ↗
15. Tsurumi T, Li J, Hoshina T, Kakemoto K, Nakada M, Akedo J (2007) Appl Phys Lett 91:18290510.1063/1.2804570 ↗
16. Pervez NK, Park J, Lu J, Stemmer S, York RA (2005) Integr Ferroelectr 77:8710.1080/10584580500414184 ↗
17. Vendik OG, Ter-Martirosyan LT (2000) J Appl Phys 87:143510.1063/1.372031 ↗
18. Suherman PM, Jackson TJ, Lancaster MJ (2007) Theory Tech 55:39710.1109/TMTT.2006.889350 ↗
19. Petrov PK, Alford NMcN, Gevorgyan S (2005) Meas Sci Technol 16:58310.1088/0957-0233/16/2/035 ↗
20. Cheng LC, Lancaster MJ (2007) IET Microw Antennas Propag 1:45310.1049/iet-map:20050228 ↗
21. Ma ZX, Becker AJ, Polakos P, Huggins H, Pastalan J, Wu H, Watts K, Wong YH, Mankiewich P (1998) IEEE Trans Electron Devices 45:181110.1109/16.661229 ↗
22. Vorobiev A, Rundqvist P, Khamchane K, Gevorgian S (2004) J Appl Phys 96(464):2
23. Sheng S, Wang P, Zhang XY, Ong CK (2009) J Phys D 42:01550110.1088/0022-3727/42/1/015501 ↗
24. Chen CL, Shen J, Chen SY, Lao GP, Chu CW, Miranda FA, Van Kuels FW, Jiang JC, Meletis EI, Chang HY (2001) Appl Phys Lett 78:65210.1063/1.1343499 ↗
25. Park BH, Gim Y, Fan Y, Jia QX, Lu P (2000) Appl Phys Lett 77:258710.1063/1.1318233 ↗
26. Koutsonas I, Hu WF, Jackson TJ, Jones IP, Lancaster MJ, Passerieux G, Chakalov RA, Chakalova RI, Darlington CNW (2004) Integr Ferroelectr 61(13):9
27. Chang LW, McMillen M, Morrison FD, Scott JF, Gregg JM (2008) Appl Phys Lett 93:13290410.1063/1.2990760 ↗
28. Chang W, Horwitz JS, Carter AC, Pond JM, Kirchoefer SW, Gilmore CM, Chrisey DB (1999) Appl Phys Lett 74:103310.1063/1.123446 ↗
29. Su HT, Lancaster MJ, Huang F, Wellhofer F (2000) Microw Opt Technol Lett 24:15510.1002/(SICI)1098-2760(20000205)24:3<155::AID-MOP3>3.0.CO;2-U ↗
30. Razumov SV, Tumarkin AV, Gaidukov MM, Gagarin AG, Kozyrev AB, Vendik OG (2002) Appl Phys Lett 81:167510.1063/1.1499987 ↗
31. Astafiev KF, Sherman VO, Tagantsev AK, Setter N, Kaydanova T, Ginley DS (2004) Appl Phys Lett 84:238510.1063/1.1690878 ↗
32. Suherman PM, Jackson TJ, Koutsonas Y, Chakalov RA, Lancaster MJ (2004) IEEE MTT-S Int 1:265
33. Suherman PM, Jackson TJ, Tse YY, Jones IP, Chakalova RI, Lancaster MJ, Porch A (2006) J Appl Phys 99:10410110.1063/1.2198933 ↗
34. Suherman PM, Jackson TJ, Tse YY, Lancaster MJ (2006) Ferroelectrics 335:6910.1080/00150190600689365 ↗
35. Chang W, Kirchoefer SW, Belloti JA, Qadri SB, Pond JM, Haeni JM, Schlom DG (2005) J Appl Phys 98:02410710.1063/1.1984074 ↗
36. Zhang SW, Wang P, Sheng S, Feng X, Ong CK (2008) J Appl Phys 104:12411010.1063/1.3053424 ↗
37. Cole MW, Weiss CV, Ngo E, Hirsch S, Coryell LA, Alpay SP (2008) Appl Phys Lett 92:18290610.1063/1.2919080 ↗
38. Frohlich H (1990) Theory of dielectrics dielectric constant and dielectric loss. Oxford University Press, Oxford
39. Chynoweth AG (1956) Phys Rev 102:70510.1103/PhysRev.102.705 ↗
40. Slack JR, Burfoot JC (1971) J Phys C Solid State Phys 4:89810.1088/0022-3719/4/8/016 ↗
41. Fitzgerald W, Darlington CNW (1976) Acta Crystallogr A 32:67110.1107/S0567739476001411 ↗
42. van der Berg RA, Blom PWM, Cillessen JFM, Wolf RM (1995) Appl Phys Lett 66:69710.1063/1.114103 ↗
43. Matsuura H (2000) New J Phys 2:8.110.1088/1367-2630/2/1/008 ↗
44. Bayer C, Jackson TJ (2006) Appl Phys Lett 89:02290810.1063/1.2221524 ↗
45. Hwang CS, Lee BT, Kang CS, Kim JW, Lee KH, Cho HJ, Horii H, Kim WD, Lee SI, Roh YB, Lee MY (1998) J Appl Phys 83:370310.1063/1.366595 ↗
46. Scott JF (1999) Ferroelectrics 232:905–91410.1080/00150199908015766 ↗
47. Bouyanfif H, Suherman PM, Jackson TJ, Marssi MEI, Hriljac J (2008) J Appl Phys 103:11410110.1063/1.2927440 ↗
48. Sirenko AA, Bernhard C, Goinik A, Clark AM, Hao J, Si W, Xi XX (2000) Nature 404:37310.1038/35006023 ↗
49. Matsunaga T, Saka H (2000) Philos Mag Lett 80:59710.1080/09500830050134309 ↗
50. Suzuki T, Nishi Y, Fujimoto M (1999) Philos Mag A 79:246110.1080/01418619908214294 ↗
51. Gao HJ, Chen CL, Rafferty B, Pennycook SJ, Luo GP, Chu CW (1999) Appl Phys Lett 75:254210.1063/1.125071 ↗
52. Chen JH, Lia CL, Urban K, Chen CL (2002) Appl Phys Lett 81:129110.1063/1.1500413 ↗
53. Matthews JW, Blakeslee AE (1974) J Cryst Growth 27:118
54. Matthews JW (1975) J Vac Sci Technol A 12:12610.1116/1.568741 ↗
55. Tse YY, Suherman PM, Jackson TJ, Jones IP (2008) Philos Mag 88:250510.1080/14786430802375642 ↗
56. Ohnishi T, Lippmaa M, Yamamoto T, Meguro S, Koinuma H (2005) Appl Phys Lett 87:24191910.1063/1.2146069 ↗
57. McGuire S, Keeble DJ, Mason R, Coleman PG, Koutsonas Y, Jackson TJ (2006) J Appl Phys 100:04410910.1063/1.2245214 ↗
58. Tse YY, Koutsonas Y, Jackson TJ, Passerieux G, Jones IP (2006) Thin Solid Films 515:178810.1016/j.tsf.2006.06.034 ↗
59. Suzuki T, Nishi Y, Fujimoto M (2000) Philos Mag A 80:62110.1080/01418610008212072 ↗
60. Devonshire AF (1954) Adv Phys 3:8510.1080/00018735400101173 ↗
61. Pertsev NA, Zembilgotoov AG, Tagantsev AK (1998) Phys Rev Lett 80:198810.1103/PhysRevLett.80.1988 ↗
62. Li H, Roytburd AL, Alpay SP, Tran TD, Salamanca-Riba L, Ramesh R (2001) Appl Phys Lett 78:235410.1063/1.1359141 ↗
63. Canedy CL, Li H, Alpay SP, Salamanca-Riba L, Roytburd AL, Ramesh R (2000) Appl Phys Lett 77:169510.1063/1.1308531 ↗
64. Chang W, Gilmore CM, Kim WJ, Pond JM, Kirchoefer SW, Qadri SB, Chrisey DB, Horwitz JS (2000) J Appl Phys 87:304410.1063/1.372297 ↗
65. Ban ZG, Alpay SP (2002) J Appl Phys 91:928810.1063/1.1473675 ↗
66. Haeni JH, Irvin P, Chang W, Uecker R, Reiche P, Li YL, Choudhury S, Tian W, Hawley ME, Craigo B, Tagantsev AK, Pan XQ, Streiffer SK, Chen LQ, Kirchoefer SW, Levy J, Schlom DG (2004) Nature 430:75810.1038/nature02773 ↗
67. Catalan G, Noheda B, McAneney J, Sinnamon I, Gregg JM (2005) Phys Rev B 72:020102(R)10.1103/PhysRevB.72.020102 ↗
68. Alpay SP, Misirliogu IB, Nagarajan V, Ramesh R (2004) Appl Phys Lett 85:204410.1063/1.1788894 ↗
69. Jona F, Shirane G (1993) Ferroelectric crystals. Dover, Oxford
70. Lines ME, Glass AM (2001) Principles and applications of ferroelectrics and related materials. Clarendon Press, Oxford10.1093/acprof:oso/9780198507789.001.0001 ↗
71. Chu MW, Szafraniak I, Hesse D, Alexe M, Gösele U (2005) Phys Rev B 72:17411210.1103/PhysRevB.72.174112 ↗
72. Wang R, Zhu Y, Shapiro SM (1998) Phys Rev Lett 80:237010.1103/PhysRevLett.80.2370 ↗
73. Darlington CNW, O’Connor DA (1976) J Phys C Solid State Phys 9:356110.1088/0022-3719/9/19/010 ↗
74. Tse YY, McMitchell SRC, Jackson TJ, Liu YH, Jones IP (2008) Ferroelectrics 368:28710.1080/00150190802367646 ↗
75. Blank DHA, Koster G, Rijnders GAJHM, Van Setten E, Slycke P, Rogalla H (2000) J Cryst Growth 211:9810.1016/S0022-0248(99)00880-5 ↗
76. Mackie RA, Singh S, Laverock J, Dugdale SB, Keeble DJ (2009) Phys Rev B 79:01410210.1103/PhysRevB.79.014102 ↗
77. Scott JF, Galt D, Price JC, Beall JA, Ono RH, Dearaujo CAP, Mcmillan LD (1995) Integr Ferroelectr 6:18910.1080/10584589508019364 ↗
78. Vendik OG, Platonova LM (1971) Sov Phys Solid State 13:1353
79. Petrov PK, Alford NMcN (2005) Appl Phys Lett 87:22290210.1063/1.2136432 ↗
80. Chan NH, Sharma RK, Smyth DM (1981) J Electrochem Soc 128:176210.1149/1.2127727 ↗
81. Pervez NK, Hansen PJ, York RA (2004) Appl Phys Lett 85:445110.1063/1.1818724 ↗