Hydrophobic Gate Dielectric Materials for Thin-Film Transistors: Advances, Challenges, and Applications

Hydrophobic gate dielectrics in thin-film transistors (TFTs) show great potential in improving device performance and stability. This is the first review that addresses this topic, summarizing existing knowledge complemented by analysis of reported findings to explore the role of hydrophobic materials as gate dielectrics in advancing organic, inorganic and solution-processed TFT technologies. Hydrophobic gate dielectrics in TFTs offer multiple advantages, including reduced charge trapping and preventing moisture absorption. These properties lead to enhanced carrier mobility, lower hysteresis, more stable threshold voltages, and long-term performance. Additionally, these materials are compatible with scalable and cost-effective deposition techniques like spin coating, chemical vapor deposition (CVD), and printing, making them ideal for large-scale electronics manufacturing. This review provides a comprehensive account of the theoretical foundations, experimental findings, and prospects of hydrophobic dielectrics in TFT applications, highlighting their pivotal role in advancing next-generation technologies.