journal article·2025-07-22Open access

Kinetic Understanding of Field-Induced Phase Transition from Tetragonal to Ferroelectric Orthorhombic Phase in Ferroelectric CeO2–HfO2–ZrO2 Films

Kohei Shimonosono, Yoshiki Maekawa, Nachi Chaya, Kazuki Okamoto, Wakiko Yamaoka, Yasushi Kawashima, Yukari Inoue, Pochun Hsieh, Akash Saha, Albert Suceava, Sankalpa Hazra, Hiroko Yokota, Venkatraman Gopalan, Hiroshi Funakubo

ACS Applied Electronic Materials· Volume 7· Issue 14

Abstract

High Resolution Image Download MS PowerPoint Slide The ferroelectric properties and structural phase transition behaviors of fluorite-type CeO 2 –HfO 2 –ZrO 2 films were investigated. The epitaxial films on indium tin oxide (ITO) (111)/yttria-stabilized zirconia (YSZ) (111) substrates were grown through pulsed laser deposition at room temperature and subsequently heat-treated at 1000 °C under a N 2 gas flow. The crystalline phases and Curie temperatures of the films were investigated by X-ray diffraction. An increase in the Ce or Zr content in the films led to a higher crystallographic symmetry, such as orthorhombic or tetragonal. In addition, electrical characterization revealed that the orthorhombic films and some of the tetragonal films displayed ferroelectricity. This was due to the field-induced phase transition from the tetragonal to ferroelectric orthorhombic phase in the films, where the Curie temperatures were relatively low. The tetragonal metastable phase was kinetically frozen and could not change into the stable orthorhombic phase at such a low temperature. The critical electric field where the field-induced phase transition occurred was below 0.8 MV/cm, which was sufficiently small compared to the coercive field. These results evidence the kinetic driving force that causes a field-induced phase transition from the paraelectric tetragonal phase to the ferroelectric orthorhombic phase in HfO 2 -based ferroelectrics. They also enhance our understanding of the thermodynamic phase stabilities of HfO 2 -based material polymorphs.
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Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, School of Materials and Chemical Technology, Institute of Science Tokyo, 4259 Nagatsuda, Midori-ku, Yokohama, Kanagawa 226-8502, Japan

TDK Corporation Technical Center

Department of Materials Science and Engineering

Pennsylvania State University

Funding

Ministry of Education, Culture, Sports, Science and Technology · Japan Society for the Promotion of Science · Japan Science and Technology Agency · U.S. Department of Energy · National Science Foundation

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