Phase Transformation and Tunable Optoelectrical Properties of Two-Dimensional Layered GaTe_{1–x}Se_{x} Crystals

Jing Li; Yinlu Gao; Xinglai Zhang; Lixin Chen; Yonghui Ma; Liu Yang; Qing Liu; Xue Jiang; Baodan Liu

doi:10.1021/acsaelm.2c00955

journal article·2022-11-22

Phase Transformation and Tunable Optoelectrical Properties of Two-Dimensional Layered GaTe_1–xSe_x Crystals

Jing Li, Yinlu Gao, Xinglai Zhang, Lixin Chen, Yonghui Ma, Liu Yang, Qing Liu, Xue Jiang, Baodan Liu

ACS Applied Electronic Materials· Volume 4· Issue 11

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Abstract

The phase transformation threshold and mechanism of layered GaTe1–xSex crystals have been controversial for a long time. Herein, we demonstrate that an extremely low Se content of 20% can induce the phase transformation of GaTe1–xSex from monoclinic structure to hexagonal structure. Theoretical and experimental studies reveal that the introducing of Se dopants effectively stabilizes the host lattice of metastable h-GaTe and thus induces the transformation of GaTe1–xSex from monoclinic to hexagonal lattice in the low Se doping range. The obtained GaTe1–xSex crystals also display tunable band gaps from 1.65 to 1. 85 eV and near band edge emission from 755 to 675 nm with increasing Se content from x = 0 to x = 0.44. More importantly, in comparison with GaTe and GaSe, layered GaTe1–xSex nanosheets exhibit p-type conductivity, higher carrier concentration, excellent photoresponse, and air stability. The fabricated GaTe1–xSex nanosheet photodetectors also show outstanding performance in the UV and visible range including a high responsivity of 91.3 A/W, an excellent EQE of 3.16 × 104%, and a specific detectivity of 5.05 × 109 Jones.

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Research context

Nanomaterials Electronic materials

OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Material Science and Engineering, Northeastern University, No. 11 Wenhua Road, Shenyang110819, China

Foshan Graduate School of Innovation, Northeastern University, No. 2 Zhihui Road, Foshan528300, China

Key Laboratory of Material Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, No. 2, Linggong Road, Dalian116024, China

Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72 Wenhua Road, Shenyang110016, China

Testing Center, Ji Hua Laboratory, No. 28, Island Ring South Road, Guicheng Street, Foshan528200, China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Fundamental Research Funds for the Central Universities · Research and Development Start-up Foundation of Foshan Graduate School of Innovation, Northeastern University · Scientific Research Project of Foshan Talents

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