Source abstract
Abstract
With the emergence of new applications of infrared photodetection technology, it is increasingly urgent to develop nontoxic and environmentally friendly alternative materials for heavy metal semiconductors. Research over the past decade has shown that silver selenide (Ag 2 Se) quantum dots (QDs) have become effective substitutes for lead- and mercury-based QDs, especially in the near-infrared (NIR) region. Owing to the large electron mobility and wide spectral response characteristic of graphene and the high light absorption efficiency of QDs, the graphene/Ag 2 Se QDs composite-based photodetectors (PDs) exhibit advantages of high responsivity and wide spectral detection range. However, long-chain ligands on the QDs’ surface limit the transport efficiency of charge carriers, which, in turn, affects the performance of PDs. Herein, in order to overcome this limitation, we propose photoconductive PDs based on graphene/Ag 2 Se QDs, and a liquid-phase inorganic ligand exchange technique is introduced to replace the original long-chain ligand of QDs with a specific inorganic short-chain molecule in this study. Consequently, the designed graphene/Ag 2 Se QDs PDs achieve a maximum responsivity of 2.878 × 10 4 A/W at a 100 mV bias and a photocurrent of 66.60 μA under an 808 nm laser excitation. The ligand exchange strategy significantly improves the performance of Ag 2 Se QDs, making them a strong candidate for NIR absorption and contributing to the development of novel PDs with small size, lightweight, low power consumption, and economic cost.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Nanocluster Synthesis and Applications · 2D Materials and Applications
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Affiliations
School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications
Guangdong University of Technology
Department of Micro and Nanoelectronics
Belarusian State University of Informatics and Radioelectronics (BSUIR)
School of Physics and Microelectronics, and Key Laboratory of Material Physics
Zhengzhou University
Department of Electronic and Electrical Engineering
Southern University of Science and Technology
Funding
National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Guangdong University of Technology · Excellent Young Scientists Fund of Jiangsu Province · Suzhou Industrial Science and Technology Program
References (38)
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