Tuning the Semiconducting Properties in Co3O4/PMN–PT Heterostructures by Oxygen Vacancies and Domain Structure
Source abstract
Abstract
Epitaxial Co3O4 films with various oxygen vacancy densities were deposited on the (001)-, (011)-, and (111)-0.7Pb(Mg1/3Nb2/3)–0.3PbTiO3 (PMN–PT) substrates to modulate the electrical properties. Experiment and calculation results demonstrate that the oxygen vacancies can reduce the resistivity of Co3O4 films. Meanwhile, the resistivity of Co3O4 films decreases in the order of (111) > (011) > (001) due to the various ferroelectric domain densities of PMN–PT substrates. The Co3O4/PMN–PT (001) heterostructure exhibits the lowest resistivity of 1.7 Ω cm at room temperature under the influence of oxygen vacancies and the ferroelectric domain. The maximum relative resistance variation of Co3O4 films reaches 200% under an external electric field as the result of the ferroelectric-field effect and the migration of oxygen vacancies. This work provides a powerful way to modulate the electrical properties of Co3O4 films and further broadens the application of Co3O4.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Multiferroics and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, China
School of Electronic and Information Engineering, Tiangong University, Tianjin 300387, China
Funding
National Natural Science Foundation of China
References (47)
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