Charge Neutral Point Shift of a 700 nm-Thick α-Ga2O3 Thin-Film Detector under Soft X-ray Irradiation
Source abstract
Abstract
This study investigates the shift of the charge neutral point (CNP) of 700 nm-thick α-Ga 2 O 3 metal–semiconductor-metal (MSM) devices in response to X-ray exposure and relaxation time. The CNP shift is mainly attributed to the generation and recombination of positive ions in the α - Ga 2 O 3 thin film. These findings contribute to the understanding of α-Ga 2 O 3 MSM X-ray detectors and have the potential to be applied in various fields of X-ray imaging and sensing technologies.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea
Department of Smart Air Mobility, Korea Aerospace University, Goyang 10540, Republic of Korea
Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea
AweXome Ray Inc. Anyang, Gyeonggi-Do 14056, Republic of Korea
Funding
Ministry of Trade, Industry and Energy
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