journal article·2024-05-28

Effect of Sheet Resistance of Indium Tin Oxide Films on Thermal Management in Optoelectronic Devices

Ran Bi, Chuantao Zheng, William W. Yu, Dingdi Wang

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Abstract

Control over the infrared (IR) reflectance and transmittance of an indium tin oxide (ITO) transparent conductive film (TCF) can significantly influence the thermal management of an optoelectronic device containing it, an aspect often overlooked in the existing literature. In this paper, we demonstrate that modulating the sheet resistance is an effective strategy to control the IR reflectance and transmittance of ITO films. As the sheet resistance of an ITO TCF increases, its IR reflectance decreases, while its IR transmittance increases. For example, when considering an ITO TCF reflecting over 60% of thermal radiation, our theoretical and experimental findings suggest that the sheet resistance should not exceed 60 Ω/□. To illustrate the effectiveness of ITO TCFs in blocking thermal radiation, we conducted an experiment by placing one on top of a Pt100 resistance thermometer that was exposed to an IR emitter. The thermometer readings for TCFs with sheet resistances of 14.9, 60.1, and 371 Ω/□ were 33.0, 36.6, and 38.4 °C, respectively. These results demonstrate that modulating the sheet resistance is an effective strategy for optimizing thermal management in various optoelectronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Nanomaterials and Printing Technologies · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

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