Improved piezoresistive properties of ZnO/SiC nanowire heterojunctions with an optimized piezoelectric nanolayer
Source abstract
Abstract
The vital issue for semiconductor pressure sensors is how to improve the sensitivity of their piezoresistive behavior. In this work, aiming to substantially promote the sensitivity, ZnO/SiC nanowire heterojunctions with various ZnO piezoelectric shell thicknesses were constructed by adjusting the depositing times of atomic layer deposition (ALD). It was found that the thicknesses of coupled ZnO nanolayers played a profound effect on the response of the heterojunctions to the change of stresses, representing the tailored piezoresistive behaviors. Accordingly, the piezoresistive coefficient was optimized to ~ 9.47 × 10–11 Pa−1 with an enhanced ΔR/R0 value of ~ 0.88, once the ZnO nanolayer thickness is fixed at ~ 20 nm, superior to most of pressures sensors based on SiC nanomaterials. This work may provide a novel strategy for exploring advanced SiC-based pressure sensors by coupling with suitable thickness of the piezoelectric nanolayer to improve piezoresistive behaviors. The tailored piezoresistive performance of ZnO/SiC nanowire heterojunctions with a adjusted shell thicknesses of ZnO piezoelectric nanolayers was reported, which had an enhanced piezoresistive coefficient of 9.47 × 10–11 Pa−1 and a ΔR/R0 of 0.88.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Thermal properties of materials · Carbon Nanotubes in Composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Ramezany A, Pourkamali S (2018) Ultrahigh frequency nanomechanical piezoresistive amplifiers for direct channel-selective receiver front-ends. Nano Lett 18(4):2551–2556. https://doi.org/10.1021/acs.nanolett.8b0024210.1021/acs.nanolett.8b00242 ↗
2. Nguyen TK, Phan HP, Dinh T, Md Foisal AR, Nguyen NT, Dao DV (2018) High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing. J Mater Chem C 6(32):8613–8617. https://doi.org/10.1039/c8tc03094d10.1039/c8tc03094d ↗
3. Cheng B, Xiong L, Cai Q, Shi H, Zhao J, Su X, Xiao Y, Lei S (2016) Enhanced giant piezoresistance performance of sandwiched ZnS/Si/SiO2 radial heterostructure nanotubes for nonvolatile stress memory with repeatable writing and erasing. ACS Appl Mater Interfaces 8(50):34648–34658. https://doi.org/10.1021/acsami.6b1096610.1021/acsami.6b10966 ↗
4. Tsai MY, Tarasov A, Hesabi ZR, Taghinejad H, Campbell PM, Joiner CA, Adibi A, Vogel EM (2015) Flexible MoS2 field-effect transistors for gate-tunable piezoresistive strain sensors. ACS Appl Mater Interfaces 7(23):12850–12855. https://doi.org/10.1021/acsami.5b0233610.1021/acsami.5b02336 ↗
5. Kumar SS, Pant BD (2014) Design principles and considerations for the “ideal” silicon piezoresistive pressure sensor: a focused review. Microsyst Technol 20(7):1213–1247. https://doi.org/10.1007/s00542-014-2215-710.1007/s00542-014-2215-7 ↗
6. Dao DV, Bui TT, Nakamura K, Dau VT, Yamada T, Hata K, Sugiyama S (2010) Towards highly sensitive strain sensing based on nanostructured materials. Adv Nat Sci-Nanosci 1(4):045012. https://doi.org/10.1088/2043-6262/1/4/04501210.1088/2043-6262/1/4/045012 ↗
7. He R, Yang P (2006) Giant piezoresistance effect in silicon nanowires. Nat Nanotechnol 1(1):42–46. https://doi.org/10.1038/nnano.2006.5310.1038/nnano.2006.53 ↗
8. Phan HP, Dao DV, Nakamura K, Dimitrijev S, Nguyen NT (2015) The piezoresistive effect of SiC for MEMS sensors at high temperatures: a review. J Microelectromech S 24(6):1663–1677. https://doi.org/10.1109/jmems.2015.247013210.1109/jmems.2015.2470132 ↗
9. Li W, Liu Q, Chen S, Fang Z, Liang X, Wei G, Wang L, Yang W, Ji Y, Mai L (2018) Single-crystalline integrated 4H-SiC nanochannel array electrode: toward high-performance capacitive energy storage for robust wide-temperature operation. Mater Horiz 5(5):883–889. https://doi.org/10.1039/c8mh00474a10.1039/c8mh00474a ↗
10. Chen S, Zhao L, Wang L, Gao F, Yang W (2019) Single-crystal N-doped SiC nanochannel array photoanode for efficient photoelectrochemical water splitting. J Mater Chem C 7:3173–3180. https://doi.org/10.1039/C9TC00061E10.1039/C9TC00061E ↗
11. Chen S, Li W, Li X, Yang W (2019) One-dimensional SiC nanostructures: designed growth, properties, and applications. Prog Mater Sci 104:138–214. https://doi.org/10.1016/j.pmatsci.2019.04.00410.1016/j.pmatsci.2019.04.004 ↗
12. Wang L, Jiang L, Zhang T, Gao F, Chen S, Yang W (2019) Graphene/SiC heterojunction nanoarrays: toward field emission applications with low turn-on fields and high stabilities. J Mater Chem C 7:13748–13753. https://doi.org/10.1039/C9TC05035C10.1039/C9TC05035C ↗
13. Eddy CR, Gaskill DK (2009) Silicon carbide as a platform for power electronics. Science 324(5933):1398–1400. https://doi.org/10.1126/science.116870410.1126/science.1168704 ↗
14. Wong EW, Sheehan PE, Lieber CM (1997) Nanobeam mechanics: elasticity, strength, and toughness of nanorods and nanotubes. Science 277(5334):1971–1975. https://doi.org/10.1126/science.277.5334.197110.1126/science.277.5334.1971 ↗
15. Shor JS, Goldstein D, Kurtz AD (1993) Characterization of n-type β-SiC as a piezoresistor. IEEE Trans Electron Devices 40(6):1093–1099. https://doi.org/10.1109/16.21473410.1109/16.214734 ↗
16. Chen J, Zhang J, Wang M, Li Y (2014) High-temperature hydrogen sensor based on platinum nanoparticle-decorated SiC nanowire device. Sens Actuators B Chem 201:402–406. https://doi.org/10.1016/j.snb.2014.04.06810.1016/j.snb.2014.04.068 ↗
17. Cui J, Zhang Z, Liu D, Zhang D, Hu W, Zou L, Lu Y, Zhang C, Lu H, Tang C, Jiang N, Parkin IP, Guo D (2019) Unprecedented piezoresistance coefficient in strained silicon carbide. Nano Lett 19(9):6569–6576. https://doi.org/10.1021/acs.nanolett.9b0282110.1021/acs.nanolett.9b02821 ↗
18. Feng XL, Matheny MH, Zorman CA, Mehregany M, Roukes ML (2010) Low voltage nanoelectromechanical switches based on silicon carbide nanowires. Nano Lett 10(8):2891–2896. https://doi.org/10.1021/nl100973410.1021/nl1009734 ↗
19. Li X, Tian Y, Gao F, Wang L, Chen S, Yang W (2018) Fabrication of N-doped 3C-SiC nanobelts with selected (11¯0) top surface and their enhanced transverse piezoresistance behaviours. Ceram Int 44(15):19021–19027. https://doi.org/10.1016/j.ceramint.2018.07.02010.1016/j.ceramint.2018.07.020 ↗
20. Shao R, Zheng K, Zhang Y (2012) Piezoresistance behaviors of ultra-strained SiC nanowires. Appl Phys Lett 101(23):1409. https://doi.org/10.1063/1.476921710.1063/1.4769217 ↗
21. Nakamura K, Toriyama T, Sugiyama S (2011) First-principles simulation on piezoresistivity in alpha and beta silicon carbide nanosheets. JAP J Appl Phys 50 (6):06GE05. https://doi.org/10.1143/jjap.50.06ge0510.1143/jjap.50.06ge05 ↗
22. Gao F, Zheng J, Wang M, Wei G, Yang W (2011) Piezoresistance behaviors of p-type 6H-SiC nanowires. Chem Commun 47(43):11993–11995. https://doi.org/10.1039/c1cc14343c10.1039/c1cc14343c ↗
23. Bi J, Wei G, Wang L, Gao F, Zheng J, Tang B, Yang W (2013) Highly sensitive piezoresistance behaviors of n-type 3C-SiC nanowires. J Mater Chem C 1(30):4514. https://doi.org/10.1039/c3tc30655k10.1039/c3tc30655k ↗
24. Cheng X, Wang L, Gao F, Yang W, Du Z, Chen D, Chen S (2019) The N and P co-doping-induced giant negative piezoresistance behaviors of SiC nanowires. J Mater Chem C 7(11):3181–3189. https://doi.org/10.1039/c8tc06623j10.1039/c8tc06623j ↗
25. Li X, Gao F, Wang L, Chen S, Deng B, Chen L, Lin CH, Yang W, Wu T (2020) Giant piezoresistance in B-doped SiC nanobelts with a gauge factor of −1800. ACS Appl Mater Interfaces 12(42):47848–47853. https://doi.org/10.1021/acsami.0c1380010.1021/acsami.0c13800 ↗
26. Phan HP, Viet Dao D, Tanner P, Wang L, Nguyen NT, Zhu Y, Dimitrijev S (2014) Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC. Appl Phys Lett 104(11):111905. https://doi.org/10.1063/1.486915110.1063/1.4869151 ↗
27. Copel M, Kuroda MA, Gordon MS, Liu XH, Mahajan SS, Martyna GJ, Moumen N, Armstrong C, Rossnagel SM, Shaw TM, Solomon PM, Theis TN, Yurkas JJ, Zhu Y, Newns DM (2013) Giant piezoresistive on/off ratios in rare-earth chalcogenide thin films enabling nanomechanical switching. Nano Lett 13(10):4650–4653. https://doi.org/10.1021/nl401710f10.1021/nl401710f ↗
28. Kim S, Dong Y, Hossain MM, Gorman S, Towfeeq I, Gajula D, Childress A, Rao AM, Koley G (2019) Piezoresistive graphene/P(VDF-TrFE) heterostructure based highly sensitive and flexible pressure sensor. ACS Appl Mater Interfaces 11(17):16006–16017. https://doi.org/10.1021/acsami.9b0196410.1021/acsami.9b01964 ↗
29. Rajagopalan P, Singh V, Palani IA (2018) Enhancement of ZnO based flexible nano generators via sol gel technique for sensing and energy harvesting applications. Nanotechnology 29(10):105406. https://doi.org/10.1088/1361-6528/aaa6bd10.1088/1361-6528/aaa6bd ↗
30. Wu W, Wen X, Wang ZL (2013) Taxel-addressable matrix of vertical-nanowire piezotronic transistors for active and adaptive tactile imaging. Science 340(6135):952–957. https://doi.org/10.1126/science.123485510.1126/science.1234855 ↗
31. Flemban TH, Singaravelu V, Devi AAS, Roqan IS (2015) Homogeneous vertical ZnO nanorod arrays with high conductivity on an in situ Gd nanolayer. RSC Adv 5(115):94670–94678. https://doi.org/10.1039/c5ra19798h10.1039/c5ra19798h ↗
32. Koumoto K, Takeda S, Pai CH, Sato T, Yanagida H (1989) High-resolution electron microscopy observations of stacking faults in β-SiC. J Am Ceram Soc 72(10):1985–1987. https://doi.org/10.1111/j.1151-2916.1989.tb06014.x10.1111/j.1151-2916.1989.tb06014.x ↗
33. Zhang ZY, Jin CH, Liang XL, Chen Q, Peng LM (2006) Current-voltage characteristics and parameter retrieval of semiconducting nanowires. Appl Phys Lett 88(7):073102. https://doi.org/10.1063/1.217736210.1063/1.2177362 ↗
34. Liu KH, Gao P, Xu Z, Bai XD, Wang EG (2008) In situ probing electrical response on bending of ZnO nanowires inside transmission electron microscope. Appl Phys Lett 92(21):213105. https://doi.org/10.1063/1.293608010.1063/1.2936080 ↗
35. Li X, Chen S, Ying P, Gao F, Liu Q, Shang M, Yang W (2016) A giant negative piezoresistance effect in 3C-SiC nanowires with B dopants. J Mater Chem C 4(27):6466–6472. https://doi.org/10.1039/c6tc01882c10.1039/c6tc01882c ↗
36. Wu J, Gao F, Shao G, Du Z, Yang W, Wang L, Wang Z, Chen S (2020) Enhanced piezoresistive behavior of SiC nanowire by coupling with piezoelectric effect. ACS Appl Mater Interfaces 12(19):21903–21911. https://doi.org/10.1021/acsami.0c0411110.1021/acsami.0c04111 ↗
37. Li X, Gao F, Wang L, Jiang L, Chen S, Yang W (2019) Enhanced piezoresistive performance of 3C-SiC nanowires by coupling with ultraviolet illumination. J Mater Chem C 7:13384–13389. https://doi.org/10.1039/c9tc04116h10.1039/c9tc04116h ↗
38. Phan HP, Dinh T, Kozeki T, Nguyen TK, Qamar A, Namazu T, Nguyen NT, Dao DV (2016) The piezoresistive effect in top-down fabricated p-type 3C-SiC nanowires. IEEE Electron Device Lett 37(8):1029–1032. https://doi.org/10.1109/led.2016.257902010.1109/led.2016.2579020 ↗
39. Liu S, Wang L, Wang Z, Cai Y, Feng X, Qin Y, Wang ZL (2018) Double-channel piezotronic transistors for highly sensitive pressure sensing. ACS Nano 12(2):1732–1738. https://doi.org/10.1021/acsnano.7b0844710.1021/acsnano.7b08447 ↗
40. Zhang Y, Liu Y, Wang ZL (2011) Fundamental theory of piezotronics. Adv Mater 23(27):3004–3013. https://doi.org/10.1002/adma.20110090610.1002/adma.201100906 ↗
41. Asthana A, Ardakani HA, Yap YK, Yassar RS (2014) Real time observation of mechanically triggered piezoelectric current in individual ZnO nanobelts. J Mater Chem C 2(20):3995–4004. https://doi.org/10.1039/c4tc00032c10.1039/c4tc00032c ↗
42. Wang L, Liu S, Feng X, Xu Q, Bai S, Zhu L, Chen L, Qin Y, Wang ZL (2017) Ultrasensitive vertical piezotronic transistor based on ZnO twin nanoplatelet. ACS Nano 11(5):4859–4865. https://doi.org/10.1021/acsnano.7b0137410.1021/acsnano.7b01374 ↗
43. Zhang X, Liu B, Yang W, Jia W, Li J, Jiang C, Jiang X (2016) 3D-branched hierarchical 3C-SiC/ZnO heterostructures for high-performance photodetectors. Nanoscale 8(40):17573–17580. https://doi.org/10.1039/c6nr06236a10.1039/c6nr06236a ↗