Oxide-based synaptic transistors gated by solid biopolymer electrolytes
Source abstract
Abstract
In this study, indium–gallium–zinc–oxide (IGZO) synaptic transistors gated by solid biopolymer electrolytes (SBEs) were fabricated on glass substrates. Ammonium bromide (NH4Br) was first doped in SBE-based alginate as the gate dielectric to study the performances of synaptic transistors. With the NH4Br doping, a high electric-double-layer capacitance of ~ 6.4 μF cm−2 was obtained for the biopolymer electrolyte, which could be attributed to the incorporation of excess protons into the electrolyte from the complexation between alginate and NH4Br. Moreover, synaptic functions based on this IGZO transistor gated by NH4Br-doped alginate were successfully emulated, including excitatory post-synaptic current, paired-pulse facilitation and post-tetanic potentiation. The present results may provide a solution for the performance improvements of synaptic electronics.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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