Highly Anisotropic Tip-Induced Domain Growth in Polydomain Triglycine Sulfate

Ferroelectrics are widely used as modern functional materials for nonlinear optics, optoelectronics, nonvolatile data storage, and nanoelectronics. Most of these applications require creation of precise micron-scale domain patterns. We have studied the current limited wall motion regime driven by anisotropic bulk screening processes during local switching in polydomain triglycine sulfate single crystals. The field application using a conductive tip of a scanning probe microscope (SPM) in a dry atmosphere resulted in formation of a partially switched area, strongly elongated in the c crystallographic direction. At the same time, switching at high humidity led to a circular shape of the area. The calculation of the spatial distribution of the external field demonstrated the possibility of domain wall shift at distances up to hundreds of microns from the SPM tip. However, after external field switch-off the depolarization field in nonscreened areas led to reverse domain wall motion. Thus, the domain wall stabilization is possible only in the regions with sufficient screening of the depolarization field. We have shown that the growth of the area size with time obeys the same current-limited wall motion expressions that were derived previously for domain growth during local switching by a highly resistive electrode. The change in the area shape with humidity was attributed to the change in the governing screening mechanism from anisotropic bulk conductivity to isotropic surface conductivity through an adsorbed water layer. The obtained results demonstrate the essential role of the screening processes during periodical poling and pave the way for further improvement of the domain engineering methods.