DataVXACS Applied Electronic MaterialsPaper
journal article·2022-06-28

Rail-to-Rail MoS2 Inverters

Jinpeng Tian, Yalin Peng, Qinqin Wang, Yanbang Chu, Zhiheng Huang, Na Li, Xiuzhen Li, Jian Tang, Biying Huang, Rong Yang, Luojun Du, Wei Yang, Dongxia Shi, Guangyu Zhang

ACS Applied Electronic Materials· Volume 4· Issue 6
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Source abstract

Abstract

Two-dimensional semiconductors are considered as promising candidates for future electronic circuits thanks to the atomic thickness and no dangling bond surface. Additionally, as one of the most fundamental logic gates, high-performance inverters are crucial for integrated circuits. Here we design rail-to-rail MoS2 inverters by using bilayer MoS2 and MoO3 doped monolayer MoS2 transistors as load and driver transistors, respectively. The inverters exhibit a good rail-to-rail operation with a switching threshold voltage VM ≈ 2 V at VDD = 4 V, a high peak gain of 344 V/V, and a large noise margin NM ≈ 0.98 × (VDD/2).
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China

Songshan Lake Materials Laboratory, Dongguan 523808, China

Funding

National Natural Science Foundation of China · Chinese Academy of Sciences · Key-Area Research and Development Program of Guangdong Province

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