Characteristic Control of n-Channel Organic Thin-Film Transistors Using a Dimethyl-Substituted Benzimidazole Dopant
Source abstract
Abstract
4-(N,N-Dimethylamino)phenyl-substituted 1,3-dimethyl-2,3-dihydro-1H-benzimidazole (N-DMBI-H) has been utilized as a solution-processable n-type dopant in organic electronics. In this study, a dimethyl-substituted N-DMBI-H derivative (DMe-N-DMBI-H), in which two methyl groups are attached at the terminal 5- and 6-positions of the benzimidazole moiety of N-DMBI-H molecule, has been examined to control its electron-donating ability. The effectiveness of DMe-N-DMBI-H as a solution-processable donor dopant has been clarified by evaluating electrical characteristics of DMe-N-DMBI-H-doped PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) thin-film transistors, such as field-effect mobility, gate threshold voltage, and contact resistance. Our electrochemical and electrical characterizations as well as quantum chemical calculations have suggested that DMe-N-DMBI-H works as a donor dopant somewhat stronger than N-DMBI-H.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronics and Electrical Engineering, Keio University, 3-14-1, Hiyoshi, Kohoku-ku, Yokohama, Kanagawa 223-8522, Japan
Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510, Japan
Department of Chemistry for Materials, Graduate School of Engineering, Mie University, Tsu, Mie 514-8507, Japan
Funding
Ministry of Economy, Trade and Industry
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