journal article·2024-05-28

Mid-Infrared Light-Emitting Diodes Based on Black Phosphorus with Asymmetric Electrodes

Lihao Ai, Junrong Zhang, Cheng Chen, Quanlong Zhang, Xiangyi Wang, Xiaoran Wang, Luyi Huang, Meng Xia, Anlian Pan, Linjun Wang, Kai Zhang, Junyong Wang

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Abstract

The mid-infrared light-emitting devices are crucial components in free-space optical communication, gas sensing, and military applications. Two-dimensional (2D) narrow-bandgap semiconductors offer opportunities for low-cost and tunable miniaturized mid-infrared light sources. Current 2D light-emitting devices face challenges in the effective injection of carriers and complex device structures. In this paper, we report a black phosphorus-based mid-infrared light-emitting diode (LED) with a simple structure of asymmetric contacts of gold and few-layer graphene. The narrow band gap of black phosphorus and tunable Fermi energy of graphene facilitate electron and hole injection simultaneously. Hot carrier injection and band filling under high injection current conditions are further revealed in the heterojunction device. This study demonstrates a simple and effective strategy for constructing 2D mid-infrared LEDs and shows potential for scalable applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu, China

Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, China

Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai 201800, China

Funding

National Key Research and Development Program of China · Government of Jiangsu Province · National Natural Science Foundation of China · Chinese Academy of Sciences · Gusu Leading Talents Program

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