Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors
Source abstract
Abstract
Nanoporous GaN distributed Bragg reflectors (DBRs) with a high reflectivity (~ 92%), which was fabricated via a doping selective electrochemical etching process, were used to deposit Eu-doped β-Ga2O3 films by using pulsed layer deposition. Structural and chemical composition analyses indicated that the 900 °C-annealed film in air has the best crystalline quality and highest photoluminescence (PL) efficiency. The epitaxial relationship between the β-Ga2O3: Eu film and DBR mirror was Ga2O3 ( $$\overline{2}$$ 01)║GaN (0001) with Ga2O3 [010]║GaN [ $$\overline{1}$$ 2 $$\overline{1}$$ 0]. Compared to the Eu:Ga2O3 film on reference template, the 900 °C-annealed film on the DBR mirror presented a ~ 20-fold enhancement in the PL emission. The performance enhancement was attributed to light-coupling enhancement of the buried DBR mirror. Because of the good electrical properties of the annealed films, the fabricated DBR substrates pave the way for developing a range of rare-earth-doped Ga2O3 optoelectronic devices.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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