Possible Extrinsic Ferroelectric-like Signals Originated from the Oxygen Vacancy Drift in HfO2-Based Films
Abstract
Research context
OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Advanced Memory and Neural Computing
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Affiliations
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
School of Materials and Energy, Lanzhou University, Lanzhou 730000, China
Joint Lab of Digital Optical Chip, Wuyi University, Jiangmen 529020, China
Funding
State Key Laboratory of Information Photonics and Optical Communications · Ministry of Science and Technology of the People's Republic of China · Natural Science Foundation of Beijing Municipality · National Natural Science Foundation of China