journal article·2023-02

Fabrication of electronic switches based on low-dimensional nanomaterials: a review

Linchen Zhang, Ke Xu, Fanan Wei

Journal of Materials Science· Volume 58· Issue 5
Publisher page

Abstract

Low-dimensional nanomaterials are receiving widespread attention as one ideal material for manufacturing high-performance electronic switches, which play an important role in improving the reliability, working speed and miniaturization of electron devices. This article reviews 16 classes of low-dimensional nanomaterials used to prepare or refine micro-/nanoelectromechanical switches, molecular electrical switches, resistive switches for memory, molecular switches, spin switches and radio frequency switches. By classifying the size difference into zero-dimensional (0D) nanomaterials, one-dimensional (1D) nanomaterials and two-dimensional (2D) nanomaterials, the effect of nanomaterials on the switching performance and the progress of application in related electronic devices are reviewed. By comparison, we discovered the advantages of low-dimensional nanomaterial-based electronic switches compared to conventional semiconductor switches. Finally, the development direction, challenges and opportunities of low-dimensional nanomaterials for improving electronic device performance are presented, and future research directions are predicted.
Source: expertdata · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (84)

Show source-provided references
1. Shomali Z, Asgari R (2018) Effects of low-dimensional material channels on energy consumption of nano-devices. Int Commun Heat Mass Transfer 94:77–84. https://doi.org/10.1016/j.icheatmasstransfer.2018.03.01410.1016/j.icheatmasstransfer.2018.03.014 ↗
2. Liu XY, Huang ZJ, Zheng XR, Shahrjerdi D, Riedo E (2021) Nanofabrication of graphene field-effect transistors by thermal scanning probe lithography. Apl Mater 9:011107.1-011107.6. https://doi.org/10.1063/5.002615910.1063/5.0026159 ↗
3. Carboni R, Vernocchi E, Siddik M, Harms J, Lyle A, Sandhu G, Ielmini D (2019) A physics-based compact model of stochastic switching in spin-transfer torque magnetic memory. IEEE Trans Electron Devices 66:4176–4182. https://doi.org/10.1109/TED.2019.293331510.1109/TED.2019.2933315 ↗
4. Rana S, Mouro J, Bleiker SJ, Reynolds JD, Chong HMH, Niklaus F, Pamunuwa D (2020) Nanoelectromechanical relay without pull-in instability for high-temperature non-volatile memory. Nat Commun 11:1–10. https://doi.org/10.1038/s41467-020-14872-210.1038/s41467-020-14872-2 ↗
5. Zhang C, Yu P-L, Li Y, Li J-C (2020) Polymer/TiO2 nanoparticles interfacial effects on resistive switching under mechanical strain. Org Electron 77:105528.1-105528.8. https://doi.org/10.1016/j.orgel.2019.10552810.1016/j.orgel.2019.105528 ↗
6. Fra V, Beccaria M, Milano G, Guastella S, Bianco S, Porro S, Laurenti M, Stassi S, Ricciardi C (2020) Hydrothermally grown ZnO nanowire array as an oxygen vacancies reservoir for improved resistive switching. Nanotechnology 31:374001.1-374001.10. https://doi.org/10.1088/1361-6528/ab992010.1088/1361-6528/ab9920 ↗
7. Mobki H, Rezazadeh G, Vefaghi A, Moradi MV (2019) Investigation of nonlinear dynamic behavior of a capacitive carbon nano-tube based electromechanical switch considering van der Waals force. Microsyst Technol Micro Nanosyst -Inf Storage Process Syst 25:461–475. https://doi.org/10.1007/s00542-018-4013-010.1007/s00542-018-4013-0 ↗
8. Jeon W, Kim Y, Lee SS (2018) resistance switching capable polymer nanocomposites employing networks of one-dimensional nanocarbon wrapped by TiO2 conformal layer. IEEE Trans Nanotechnol 17:567–573. https://doi.org/10.1109/TNANO.2018.282656110.1109/TNANO.2018.2826561 ↗
9. Wang YH, He ZQ, Lai XB, Liu BY, Chen YB, Zhang LW, Wang FP (2021) Optical erasable bipolar resistive switching on TiO2 film in nanoscale. J Alloys Compd 873:159809.1-159809.7. https://doi.org/10.1016/j.jallcom.2021.15980910.1016/j.jallcom.2021.159809 ↗
10. Arya DS, Kumar S, Garg M, Chourasiya N, Singh P (2021) Reducing dynamism in DRAM With bistable MEMS switch as sleep transistor. IEEE Trans Electron Devices 68:1045–1049. https://doi.org/10.1109/TED.2021.305110610.1109/TED.2021.3051106 ↗
11. Qian ZY, Kang SH, Rajaram V, Cassella C, Mcgruer NE, Rinaldi M (2017) Zero-power infrared digitizers based on plasmonically enhanced micromechanical photoswitches. Nat Nanotechnol 12:969–973. https://doi.org/10.1038/nnano.2017.14710.1038/nnano.2017.147 ↗
12. Patton ST, Slocik JM, Campbell A, Hu JJ, Naik RR, Voevodin AA (2008) Bimetallic nanoparticles for surface modification and lubrication of MEMS switch contacts. Nanotechnology 19:405705.1-405705.6. https://doi.org/10.7567/APEX.7.07260110.7567/APEX.7.072601 ↗
13. Patton ST, Voevodin AA, Vaia RA, Pender M, Dianianti SJ, Phillips B (2008) Nanoparticle liquids for surface modification and lubrication of MEMS switch contacts. J Microelectromech Syst 17:741–746. https://doi.org/10.1109/JMEMS.2008.92424910.1109/JMEMS.2008.924249 ↗
14. Kim JG, Suh D, Kang H (2021) Large variation in Young’s modulus of carbon nanotube yarns with different diameters. Curr Appl Phys 21:96–100. https://doi.org/10.1016/j.cap.2020.10.01510.1016/j.cap.2020.10.015 ↗
15. Pothnis JR, Kalyanasundaram D, Gururaja S (2021) Enhancement of open hole tensile strength via alignment of carbon nanotubes infused in glass fiber—epoxy—CNT multi-scale composites. Compos Part a-Appl Sci Manuf 140:106155.1-106155.32. https://doi.org/10.1016/j.compositesa.2020.10615510.1016/j.compositesa.2020.106155 ↗
16. Yu W, Liu CH, Fan SS (2021) Advances of CNT-based systems in thermal management. Nano Res 14:2471–2490. https://doi.org/10.1007/s12274-020-3255-110.1007/s12274-020-3255-1 ↗
17. Akbarpour MR, Mirabad HM, Alipour S, Kim HS (2020) Enhanced tensile properties and electrical conductivity of Cu-CNT nanocomposites processed via the combination of flake powder metallurgy and high pressure torsion methods. Mater Sci Eng Struct Mater Prop Microstruct Process 773:1388881–13888830. https://doi.org/10.1016/j.msea.2019.13888810.1016/j.msea.2019.138888 ↗
18. Rana S, Reynolds JD, Ling TY, Shamsudin MS, Pu SH, Chong HMH, Pamunuwa D (2018) Nano-crystalline graphite for reliability improvement in MEM relay contacts. Carbon 133:193–199. https://doi.org/10.1016/j.carbon.2018.03.01110.1016/j.carbon.2018.03.011 ↗
19. Tsunoda J, Iwataki M, Horikawa K, Amano S, Ota K, Hiraiwa A, Kawarada H (2021) Low on-resistance (2.5 m omega center dot cm(2))VerticalType 2-D hole gas diamond MOSFETs with trench Gate Structure. IEEE Trans Electron Devices 68:3490–3496. https://doi.org/10.1109/TED.2021.308356810.1109/TED.2021.3083568 ↗
20. Van NH, Muruganathan M, Kulothungan J, Mizuta H (2018) Fabrication of a three-terminal graphene nanoelectromechanical switch using two-dimensional materials. Nanoscale 10:12349–12355. https://doi.org/10.1039/c7nr08439k10.1039/c7nr08439k ↗
21. Lee TH, Bhunia S, Mehregany M (2010) Electromechanical computing at 500 degrees C with silicon carbide. Science 329:1316–1318. https://doi.org/10.1126/science.119251110.1126/science.1192511 ↗
22. Han YM, Nickle C, Zhang ZY, Astier H, Duffin TJ, Qi DC, Wang Z, Del Barco E, Thompson D, Nijhuis CA (2020) Electric-field-driven dual-functional molecular switches in tunnel junctions. Nat Mater 19:843.1-843.13. https://doi.org/10.1038/s41563-020-0697-510.1038/s41563-020-0697-5 ↗
23. Munoz J, Redondo E, Pumera M (2021) Bistable (supra) molecular switches on 3D-printed responsive interfaces with electrical readout. ACS Appl Mater Interfaces 13:12649–12655. https://doi.org/10.1021/acsami.0c1448710.1021/acsami.0c14487 ↗
24. Pham T, Li GH, Bekyarova E, Itkis ME, Mulchandani A (2019) MoS2-based optoelectronic gas sensor with sub-parts-per-billion limit of NO2 gas detection. ACS Nano 13:3196–3205. https://doi.org/10.1021/acsnano.8b0877810.1021/acsnano.8b08778 ↗
25. Pisoni R, Lei ZJ, Back P, Eich M, Overweg H, Lee Y, Watanabe K, Taniguchi T, Ihn T, Ensslin K (2018) Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure. Appl Phys Lett 112:123101.1-123101.3. https://doi.org/10.1063/1.502111310.1063/1.5021113 ↗
26. Zhou K, Zhao ZD, Pan LY, Wang ZY (2019) Silicon nanowire pH sensors fabricated with CMOS compatible sidewall mask technology. Sens Actuators B-Chem 279:111–121. https://doi.org/10.1016/j.snb.2018.09.11410.1016/j.snb.2018.09.114 ↗
27. Milano G, Boarino L, Ricciardi C (2019) Junction properties of single ZnO nanowires with asymmetrical Pt and Cu contacts. Nanotechnology 30:244001.1-244001.11. https://doi.org/10.1088/1361-6528/ab0a9c10.1088/1361-6528/ab0a9c ↗
28. Zhou W, Yang R, He HK, Huang HM, Xiong J, Guo X (2018) Optically modulated electric synapses realized with memristors based on ZnO nanorods. Appl Phys Lett 113:061107.1-061107.5. https://doi.org/10.1063/1.504564310.1063/1.5045643 ↗
29. Hou Y, Pan Y, Dong C, Nie B (2020) Direct transformation of AgNO3 complex encapsulated Fullerene (C60) microcrystal on solid silver Nitrate Crystal without organic Ligands. Appl Organomet Chem 34:e5978.1-e59788. https://doi.org/10.1002/aoc.597810.1002/aoc.5978 ↗
30. Du S, Zhang Y, Yoshida K, Hirakawa K (2020) Ultrafast rattling motion of a single atom in a fullerene cage sensed by terahertz spectroscopy. Appl Phys Express 13:105002.1-105002.5. https://doi.org/10.35848/1882-0786/abb68e10.35848/1882-0786/abb68e ↗
31. Xu H, Wang Z, Lu Y, Wei S, Liu X, Wang L (2020) Construction of a molecular switch based on two metastable states of fullerene on Cu(111). J Phys Chem C 124:11158–11164. https://doi.org/10.1021/acs.jpcc.0c0118910.1021/acs.jpcc.0c01189 ↗
32. Huang T, Zhao J, Feng M, Popov AA, Yang S, Dunsch L, Petek H (2011) A molecular switch based on current-driven rotation of an encapsulated cluster within a fullerene cage. Nano Lett 11:5327–5332. https://doi.org/10.1021/nl202840910.1021/nl2028409 ↗
33. Chandler HJ, Stefanou M, Campbell EEB, Schaub R (2019) Li@C60 as a multi-state molecular switch. Nat Commun 10:2283.1-2283.8. https://doi.org/10.1038/s41467-019-10300-210.1038/s41467-019-10300-2 ↗
34. Simpson GJ, Hogan SWL, Caffio M, Adams CJ, Fruchtl H, Van Mourik T, Schaub R (2014) New class of metal bound molecular switches involving H-tautomerism. Nano Lett 14:634–639. https://doi.org/10.1021/nl403851710.1021/nl4038517 ↗
35. Ko S-D, Seo M-H, Yoon Y-H, Han C-H, Lim K-S, Kim C-K, Yoon J-B (2017) Investigation of the nanoparticle electrical contact lubrication in MEMS switches. J Microelectromech Syst 26:1417–1427. https://doi.org/10.1109/JMEMS.2017.276181110.1109/JMEMS.2017.2761811 ↗
36. Jo E, Lee Y-B, Jung Y, Kim S-B, Kang Y, Seo M-H, Yoon J-B, Kim J (2021) Integration of gold nanoparticle-carbon nanotube composite for enhanced contact lifetime of microelectromechanical switches with very low contact resistance. ACS Appl Mater Interfaces 13:16959–16967. https://doi.org/10.1021/acsami.0c2208410.1021/acsami.0c22084 ↗
37. Tanaka Y, Usui H, Domi Y, Ohtani M, Kobiro K, Sakaguchi H (2019) Mesoporous spherical aggregates consisted of Nb-doped anatase TiO2 nanoparticles for Li and Na storage materials. ACS Appl Energy Mater 2:636–643. https://doi.org/10.1021/acsaem.8b0165610.1021/acsaem.8b01656 ↗
38. Commodo M, De Falco G, Sarnelli E, Campajola M, Aloisio A, D’anna A, Minutolo P (2021) Resistive switching phenomenon observed in self-assembled films of flame-formed carbon-TiO2 nanoparticles. Materials 14:4672.1-4672.13. https://doi.org/10.3390/ma1416467210.3390/ma14164672 ↗
39. Kumari RA, Ponnam A (2021) Role of sweep direction and substrate work function on resistive switching of titanium-di-oxide TiO2 nanoparticles. Curr Appl Phys 25:75–81. https://doi.org/10.1016/j.cap.2021.03.00210.1016/j.cap.2021.03.002 ↗
40. Borjans F, Mi X, Petta JR (2021) Spin digitizer for high-fidelity readout of a cavity-coupled silicon triple quantum dot. Phys Rev Appl 15:0440521–0440528. https://doi.org/10.1103/PhysRevApplied.15.04405210.1103/PhysRevApplied.15.044052 ↗
41. Dong QR (2020) Electrical spin switch in a two-electron triangular graphene quantum dot. Phys E Low Dimens Syst Nanostruct 116:113779.1-113779.6. https://doi.org/10.1016/j.physe.2019.11377910.1016/j.physe.2019.113779 ↗
42. Dong QR, Yin XY, Liu CX (2021) The effect of size and applied electric field on the spin switch in a two-electron graphene quantum dot and graphene qubit. Phys E Low Dimens Syst Nanostruct 127:114555.1-114555.4. https://doi.org/10.1016/j.physe.2020.11455510.1016/j.physe.2020.114555 ↗
43. Sokolov AS, Ali M, Riaz R, Abbas Y, Ko MJ, Choi C (2019) Silver-adapted diffusive memristor based on organic nitrogen-doped graphene oxide quantum dots (N-GOQDs) for artificial biosynapse applications. Adv Func Mater 29:1807504.1-1807504.11. https://doi.org/10.1002/adfm.20180750410.1002/adfm.201807504 ↗
44. Ko JW, Baek G, Choi WY (2020) Scaling trends of monolithic 3-D complementary metal-oxide-semiconductor nanoelectromechanical reconfigurable logic circuits. IEEE Trans Electron Devices 67:3861–3867. https://doi.org/10.1109/TED.2020.300888010.1109/TED.2020.3008880 ↗
45. Chen J, Wu YL, Zhu KL, Sun F, Guo CG, Wu XL, Cheng GA, Zheng RT (2019) Core-shell copper nanowire-TiO2 nanotube arrays with excellent bipolar resistive switching properties. Electrochim Acta 316:133–142. https://doi.org/10.1016/j.electacta.2019.05.11010.1016/j.electacta.2019.05.110 ↗
46. Shih YC, Lee L, Liang KD, Manikandan A, Liu WW, Chen YZ, Chang MT, Wang ZM, Chueh YL (2021) Smart design of resistive switching memory by an in situ current-induced oxidization process on a single crystalline metallic nanowire. Adv Electron Mater 7:20002521–200025211. https://doi.org/10.1002/aelm.20200025210.1002/aelm.202000252 ↗
47. Retamal JRD, Ho CH, Tsai KT, Ke JJ, He JH (2019) Self-organized Al nanotip electrodes for achieving ultralow-power and error-free memory. IEEE Trans Electron Devices 66:938–943. https://doi.org/10.1109/TED.2018.288887310.1109/TED.2018.2888873 ↗
48. Abubakar S, Chyi JLY, Tan ST, Sagadevan S, Talib ZA, Paiman S (2021) Nanoscale domain imaging and the electromechanical response of zinc oxide nanorod arrays synthesized on different substrates. J Mater Res Technol-Jmr&T 14:2451–2463. https://doi.org/10.1016/j.jmrt.2021.07.12510.1016/j.jmrt.2021.07.125 ↗
49. Li XL, Lee SK, Sha JW, Deng YY, Zhao YJ, Wang RH (2021) In-situ growth of Fe nanoparticles encapsulated by carbon onions with controllable thickness on graphene nanoribbon-reinforced graphene. Carbon 174:423–429. https://doi.org/10.1016/j.carbon.2020.12.05910.1016/j.carbon.2020.12.059 ↗
50. Scuratti F, Salazar-Rios JM, Luzio A, Kowalski S, Allard S, Jung S, Scherf U, Loi MA, Caironi M (2021) Charge transport in high-mobility field-effect transistors based on inkjet printed random networks of polymer wrapped single-walled carbon nanotubes. Adv Funct Mater 311:20068951–20068959. https://doi.org/10.1002/adfm.20200689510.1002/adfm.202006895 ↗
51. Jariwala PH, Sonavane YA, Thakor PB, Gupta SK (2021) Strain dependent electronic transport of pristine Si and Ge nanowires. Comput Mater Sci 188:110181.1-110181.10. https://doi.org/10.1016/j.commatsci.2020.11018110.1016/j.commatsci.2020.110181 ↗
52. Kim Y, Jeon W, Kim M, Park JH, Hwang CS, Lee SS (2020) Modulated filamentary conduction of Ag/TiO2 core-shell nanowires to impart extremely sustained resistance switching behavior in a flexible composite. Appl Mater Today 19:100569.1-100569.8. https://doi.org/10.1016/j.apmt.2020.10056910.1016/j.apmt.2020.100569 ↗
53. Jo E, Seo MH, Pyo S, Ko SD, Kwon DS, Choi J, Yoon JB, Kim J (2019) Integration of a carbon nanotube network on a microelectromechanical switch for ultralong contact lifetime. ACS Appl Mater Interfaces 11:18617–18625. https://doi.org/10.1021/acsami.9b0274710.1021/acsami.9b02747 ↗
54. Abbasi SA, Kim TH, Somu S, Wang HL, Chai ZM, Upmanyu M, Busnaina A (2020) Fabrication of a nanoelectromechanical bistable switch using directed assembly of SWCNTs. J Phys D-Appl Phys 53:23LT02.1-23LT02.8. https://doi.org/10.1088/1361-6463/ab7e6110.1088/1361-6463/ab7e61 ↗
55. Qian Y, Soon BW, Singh P, Campanella H, Lee C (2014) All metal nanoelectromechanical switch working at 300 degrees C for rugged electronics applications. Nanoscale 6:5606–5611. https://doi.org/10.1039/c3nr05255a10.1039/c3nr05255a ↗
56. Chen Y, Gao W, Jiang Q (2019) Molecular switch by adsorbing the Au-6 cluster on single-walled carbon nanotubes: role of many-body effects of vdW forces. J Phys Chem C 123:9217–9222. https://doi.org/10.1021/acs.jpcc.9b0109810.1021/acs.jpcc.9b01098 ↗
57. Shao ZB, Jie JS, Jiang TH, Wu XF, Li K, Xia FF, Zhang XJ, Zhang XH (2018) CdS nanoribbon-based resistive switches with ultrawidely tunable power by surface charge transfer doping. Adv Funct Mater 28:17065771–170657711. https://doi.org/10.1002/adfm.20170657710.1002/adfm.201706577 ↗
58. Xue D, Song HJ, Zhong XL, Wang JB, Zhao N, Guo HX, Cong PT (2020) Flexible resistive switching device based on the TiO2 nanorod arrays for non-volatile memory application. J Alloys Compd 822:153552.1-153552.26. https://doi.org/10.1016/j.jallcom.2019.15355210.1016/j.jallcom.2019.153552 ↗
59. Mullani N, Ali I, Dongale TD, Kim GH, Choi BJ, Basit MA, Park TJ (2020) Improved resistive switching behavior of multiwalled carbon nanotube/ TiO2 nanorods composite film by increased oxygen vacancy reservoir. Mater Sci Semicond Process 108:104907.1-104907.10. https://doi.org/10.1016/j.mssp.2019.10490710.1016/j.mssp.2019.104907 ↗
60. Hu SM, Yue JL, Jiang C, Tang XZ, Huang XZ, Du ZJ, Wang CQ (2019) Resistive switching behavior and mechanism in flexible TiO2@C-f memristor crossbars. Ceram Int 45:10182–10186. https://doi.org/10.1016/j.ceramint.2019.02.06810.1016/j.ceramint.2019.02.068 ↗
61. Milano G, Porro S, Valov I, Ricciardi C (2019) Recent developments and perspectives for memristive devices based on metal oxide nanowires. AdvElectron Mater 5:1800909.1-1800909.34. https://doi.org/10.1002/aelm.20180090910.1002/aelm.201800909 ↗
62. Jasulaneca L, Livshits AI, Meija R, Kosmaca J, Sondors R, Ramma MM, Jevdokimovs D, Prikulis J, Erts D (2021) Fabrication and characterization of double- and single-clamped CuO nanowire based nanoelectromechanical switches. Nanomaterials 11:117.1-117.13. https://doi.org/10.3390/nano1101011710.3390/nano11010117 ↗
63. Meija R, Livshits AI, Kosmaca J, Jasulaneca L, Andzane J, Biswas S, Holmes JD, Erts D (2019) Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches. Nanotechnology 30:385203.1-385203.21. https://doi.org/10.1088/1361-6528/ab2b1110.1088/1361-6528/ab2b11 ↗
64. Lin XY, Yang W, Wang KL, Zhao WS (2019) Two-dimensional spintronics for low-power electronics. Nat Electron 2:274–283. https://doi.org/10.1038/s41928-019-0273-710.1038/s41928-019-0273-7 ↗
65. Wang SK, Hung NT, Tian HY, Islam MS, Saito R (2021) Switching behavior of a heterostructure based on periodically doped graphene nanoribbon. Phys Rev Appl 16:024030.1-024030.10. https://doi.org/10.1103/PhysRevApplied.16.02403010.1103/PhysRevApplied.16.024030 ↗
66. Xiao XJ, Tan Y, Guo QQ, Li JB, Liang S, Xiao S, Zhong HH, He MD, Liu LH, Luo JH, Chen LQ (2020) Dual-channel bistable switch based on a monolayer graphene nanoribbon nanoresonator coupled to a metal nanoparticle. Opt Express 28:3136–3146. https://doi.org/10.1364/OE.38349310.1364/OE.383493 ↗
67. Das SR, Dutta S (2019) Spin filtering and rectification in lateral heterostructures of Zigzag-Edge BC3 and graphene nanoribbons: implications for switching and memory devices. Acs Appl Nano Mater 2:5365–5372. https://doi.org/10.1021/acsanm.9b0043710.1021/acsanm.9b00437 ↗
68. Pham VD, Ghosh S, Joucken F, Pelaez-Fernandez M, Repain V, Chacon C, Bellec A, Girard Y, Sporken R, Rousset S, Dappe YJ, Narasimhan S, Lagoute J (2019) Selective control of molecule charge state on graphene using tip-induced electric field and nitrogen doping. Npj 2d Mater Appl 3:51–55. https://doi.org/10.1038/s41699-019-0087-510.1038/s41699-019-0087-5 ↗
69. Liu C, Zou XM, Wu MC, Wang Y, Lv YW, Duan XP, Zhang S, Liu XQ, Wu WW, Hu WD, Fan ZY, Liao L (2021) Polarization-resolved broadband MoS2/black phosphorus/MoS2 optoelectronic memory with ultralong retention time and ultrahigh switching ratio. Adv Funct Mater 31:2100781.1-2100781.9. https://doi.org/10.1002/adfm.20210078110.1002/adfm.202100781 ↗
70. Ge R, Wu X, Kim M, Shi J, Sonde S, Tao L, Zhang Y, Lee JC, Akinwande D (2018) Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett 18:434–441. https://doi.org/10.1021/acs.nanolett.7b0434210.1021/acs.nanolett.7b04342 ↗
71. Seo MH, Ko JH, Lee JO, Ko SD, Mun JH, Cho BJ, Kim YH, Yoon JB (2018) > 1000-fold lifetime extension of a nickel electromechanical contact device via graphene. ACS Appl Mater Interfaces 10:9085–9093. https://doi.org/10.1021/acsami.7b1577210.1021/acsami.7b15772 ↗
72. Kim SM, Lee HI, Lee Y, Kim SY, Yoo TJ, Heo S, Kang SC, Hwang HJ, Lee BH (2021) Non-destructive defect level analysis of graphene using amplitude-modulated discharge current analysis. Carbon 179:627–632. https://doi.org/10.1016/j.carbon.2021.04.08210.1016/j.carbon.2021.04.082 ↗
73. Wu QQ, Hou SJ, Sadeghi H, Lambert CJ (2018) A single-molecule porphyrin-based switch for graphene nano-gaps. Nanoscale 10:6524–6530. https://doi.org/10.1039/x0xx00000x10.1039/x0xx00000x ↗
74. Singh T, Mansour RR (2019) Miniaturized DC-60 GHz RF PCM GeTe-based monolithically integrated redundancy switch matrix using T-type switching unit cells. IEEE Trans Microw Theory Tech 67:5181–5190. https://doi.org/10.1109/TMTT.2019.294435910.1109/TMTT.2019.2944359 ↗
75. Kim M, Ge RJ, Wu XH, Lan X, Tice J, Lee JC, Akinwande D (2018) Zero-static power radio-frequency switches based on MoS2 atomristors. Nature Communications 9:2524.1-2524.7. https://doi.org/10.1038/s41467-018-04934-x10.1038/s41467-018-04934-x ↗
76. Tripathi R, Bhattacharyya P, Nandi S, Shukla A, Misra A (2021) Molecular switching operation in gate constricted interface of MoS2 and hBN heterostructure. Appl Mater Today 23:100999.1-100999.9. https://doi.org/10.1016/j.apmt.2021.10099910.1016/j.apmt.2021.100999 ↗
77. Wu XH, Ge RJ, Chen PA, Chou H, Zhang ZP, Zhang YF, Banerjee S, Chiang MH, Lee JC, Akinwande D (2019) Thinnest nonvolatile memory based on monolayer h-BN. Adv Mater 31:18067901–18067907. https://doi.org/10.1002/adma.20180679010.1002/adma.201806790 ↗
78. Jo Y, Dimitrakopoulos C (2020) Spray-coated, volatile and nonvolatile, two-terminal, resistive switching memory devices comprising liquid-exfoliated black phosphorus and graphene layers. IEEE Trans Electron Devices 67:5484–5489. https://doi.org/10.1109/TED.2020.302955210.1109/TED.2020.3029552 ↗
79. Hsieh YL, Su WH, Huang CC, Su CY (2019) Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled. Nanotechnology 30:445702.1-445702.30. https://doi.org/10.1088/1361-6528/ab360610.1088/1361-6528/ab3606 ↗
80. Rehman S, Khan MF, Aftab S, Kim H, Eom J, Kim DK (2019) Thickness-dependent resistive switching in black phosphorus CBRAM. J Mater Chem C 7:725–732. https://doi.org/10.1039/c8tc04538k10.1039/c8tc04538k ↗
81. Ding GL, Wang YX, Zhang GX, Zhou K, Zeng KL, Li ZX, Zhou Y, Zhang C, Chen XL, Han ST (2019) 2D metal-organic framework nanosheets with time-dependent and multilevel memristive switching. Adv Funct Mater 29:18066371–180663711. https://doi.org/10.1002/adfm.20180663710.1002/adfm.201806637 ↗
82. Albano LGS, Vello TP, De Camargo DHS, Da Silva RML, Padilha ACM, Fazzio A, Bufon CCB (2020) Ambipolar resistive switching in an ultrathin surface-supported metal-organic framework vertical heterojunction. Nano Lett 20:1080–1088. https://doi.org/10.1021/acs.nanolett.9b0435510.1021/acs.nanolett.9b04355 ↗
83. Kolonelou E, Papathanassiou AN, Sakellis E (2019) Pressure-induced electro-switching of polymer/nano-graphene composites. Mater Chem Phys 232:319–324. https://doi.org/10.1016/j.matchemphys.2019.05.00210.1016/j.matchemphys.2019.05.002 ↗
84. Mutiso RM, Kikkawa JM, Winey KI (2013) Resistive switching in silver/polystyrene/silver nano-gap devices. Appl Phys Lett 103:223302.1-223302.5. https://doi.org/10.1063/1.483187610.1063/1.4831876 ↗